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Arkka Bhattacharyya
65  Ergebnisse:
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1

Erratum: "Ultra-low reverse leakage in large area kilo-volt..:

Roy, Saurav ; Kostroun, Benjamin ; Cooke, Jacqueline...
Applied Physics Letters.  124 (2024)  2 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Photoluminescence mapping of laser-damaged β-Ga2O3:

Huso, Jesse ; McCluskey, Matthew D. ; McCloy, John S....
MRS Communications.  14 (2024)  3 - p. 427-431 , 2024
Link: https://doi.org/10.1557/..
 
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3

Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates:

Peterson, Carl ; Alema, Fikadu ; Bhattacharyya, Arkka...
Applied Physics Letters.  124 (2024)  8 - p. , 2024
Link: https://doi.org/10.1063/..
 
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4

Over 6 μm thick MOCVD-grown low-background carrier density ..:

Bhattacharyya, Arkka ; Peterson, Carl ; Chanchaiworawit, Kittamet...
Applied Physics Letters.  124 (2024)  1 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs:

Song, Yiwen ; Bhattacharyya, Arkka ; Karim, Anwarul...
ACS Applied Materials & Interfaces.  15 (2023)  5 - p. 7137-7147 , 2023
Link: https://doi.org/10.1021/..
 
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6

Ultra-low reverse leakage in large area kilo-volt class β-G..:

Roy, Saurav ; Kostroun, Benjamin ; Cooke, Jacqueline...
Applied Physics Letters.  123 (2023)  24 - p. , 2023
Link: https://doi.org/10.1063/..
 
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7

Single-Event Burnout by Cf-252 Irradiation in Vertical $\be..:

, In: 2023 Device Research Conference (DRC),
Islam, Sajal ; Senarath, Aditha S. ; Sengupta, Arijit... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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8

2.1 kV (001)- β-Ga2O3 vertical Schottky barrier diode with ..:

Roy, Saurav ; Bhattacharyya, Arkka ; Peterson, Carl.
Applied Physics Letters.  122 (2023)  15 - p. , 2023
Link: https://doi.org/10.1063/..
 
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9

Influences of Orientation and Remote O2 Plasma Exposure on ..:

Sun, Rujun ; Bhattacharyya, Arkka ; Saleh, Muad..
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 1188-1193 , 2023
Link: https://doi.org/10.1109/..
 
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10

Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2..:

Alema, Fikadu ; Peterson, Carl ; Bhattacharyya, Arkka...
IEEE Electron Device Letters.  43 (2022)  10 - p. 1649-1652 , 2022
Link: https://doi.org/10.1109/..
 
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11

On the terahertz response of metal-gratings on anisotropic ..:

Jia, Wei ; Lou, Minhan ; Gopalan, Prashanth...
Journal of Applied Physics.  131 (2022)  19 - p. , 2022
Link: https://doi.org/10.1063/..
 
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12

β-Ga2O3Dielectric Superjunction Schottky Barrier Diode Exce..:

, In: 2022 IEEE International Conference on Emerging Electronics (ICEE),
Roy, Saurav ; Bhattacharyya, Arkka ; Peterson, Carl. - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
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13

Lateral Gallium Oxide Field Effect Transistors with High Fi..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Bhattacharyya, Arkka ; Ranga, Praneeth ; Krishnamoorthy, Sriram - p. 300-303 , 2022
Link: https://doi.org/10.1109/..
 
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14

4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding..:

Bhattacharyya, Arkka ; Sharma, Shivam ; Alema, Fikadu...
Applied Physics Express.  15 (2022)  6 - p. 061001 , 2022
Link: https://doi.org/10.35848..
 
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15

Photoluminescence microscopy as a noninvasive characterizat..:

Cooke, Jacqueline ; Ranga, Praneeth ; JESENOVEC, JANI...
Optical Materials Express.  , 2022
Link: https://doi.org/10.1364/..
 
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