E-LIB Suche - Ergebnisse für: Atsushi Hiraiwa, Atsushi Hiraiwa

1

Degradation of n+/p Junction Characteristics by Aluminum Co..:

Itoga, Toshihiko ; Kojima, Hisao ; Atsushi Hiraiwa, Atsushi Hiraiwa.
Japanese Journal of Applied Physics. 36 (1997) 7R - p. 4431 , 1997

Link: https://doi.org/10.1143/..

2

P-Type Polysilicon Processing Temperature ReductionUsing In..:

Kobayashi, Takashi ; Simpei Iijima, Simpei Iijima ; Atsushi Hiraiwa, Atsushi Hiraiwa
Japanese Journal of Applied Physics. 32 (1993) 5A - p. L638 , 1993

Link: https://doi.org/10.1143/..

3

Over 1 A Operation of Vertical-Type Diamond MOSFETs:

Oi, Nobutaka ; Okubo, Satoshi ; Tsuyuzaki, Ikuto..
IEEE Electron Device Letters. , 2024

Link: https://doi.org/10.1109/..

4

Normally-off operation in vertical diamond MOSFETs using an..:

Ota, Kosuke ; Fu, Yu ; Narita, Kento...
Carbon. 213 (2023) - p. 118099 , 2023

Link: https://doi.org/10.1016/..

5

Capacitance–voltage characterization of metal–insulator–sem..:

Hiraiwa, Atsushi ; Okubo, Satoshi ; Ogura, Masahiko..
Journal of Applied Physics. 132 (2022) 12 - p. , 2022

Link: https://doi.org/10.1063/..

6

Over 1 A/mm drain current density and 3.6 W/mm output power..:

Kudara, Ken ; Arai, Masakazu ; Suzuki, Yukiko...
Carbon. 188 (2022) - p. 220-228 , 2022

Link: https://doi.org/10.1016/..

7

580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs ..:

Tsunoda, Jun ; Niikura, Naoya ; Ota, Kosuke...
IEEE Electron Device Letters. 43 (2022) 1 - p. 88-91 , 2022

Link: https://doi.org/10.1109/..

8

300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxi..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Fu, Yu ; Chang, Yuhao ; Zhu, Xiaohua... - p. 121-124 , 2022

Link: https://doi.org/10.1109/..

9

Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si..:

Fu, Yu ; Kono, Shozo ; Kawarada, Hiroshi.
IEEE Transactions on Electron Devices. 69 (2022) 7 - p. 3604-3610 , 2022

Link: https://doi.org/10.1109/..

10

Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas..:

Tsunoda, Jun ; Iwataki, Masayuki ; Horikawa, Kiyotaka...
IEEE Transactions on Electron Devices. 68 (2021) 7 - p. 3490-3496 , 2021

Link: https://doi.org/10.1109/..

11

Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond ..:

Imanishi, Shoichiro ; Kudara, Ken ; Ishiwata, Hitoshi...
IEEE Electron Device Letters. 42 (2021) 2 - p. 204-207 , 2021

Link: https://doi.org/10.1109/..

12

Space-charge-controlled field emission analysis of current ..:

Hiraiwa, Atsushi ; Horikawa, Kiyotaka ; Kawarada, Hiroshi
Journal of Applied Physics. 129 (2021) 19 - p. , 2021

Link: https://doi.org/10.1063/..

13

Dynamic space-charge-controlled field emission model of cur..:

Hiraiwa, Atsushi ; Horikawa, Kiyotaka ; Kawarada, Hiroshi
Journal of Applied Physics. 127 (2020) 6 - p. , 2020

Link: https://doi.org/10.1063/..

14

Over 12000 A/cm2and 3.2 m$\Omega$ cm2Miniaturized Vertical-..:

Iwataki, Masayuki ; Oi, Nobutaka ; Horikawa, Kiyotaka...
IEEE Electron Device Letters. 41 (2020) 1 - p. 111-114 , 2020

Link: https://doi.org/10.1109/..

15

Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Throu..:

Oi, Nobutaka ; Kudo, Takuya ; Inaba, Masafumi...
IEEE Electron Device Letters. 40 (2019) 6 - p. 933-936 , 2019

Link: https://doi.org/10.1109/..