E-LIB Suche - Ergebnisse für: Auleytner, J

1

Physica status solidi

Volume 20, Number 2: April 1 Physica status solidi ; Volume 20, Number 2

Abarenkov, I. V ; Abdullaev, G. B ; Abdurakhmanova, A. A... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

2

Physica status solidi

Volume 10, Number 2: April 16 Physica status solidi ; Volume 10, Number 2, A

Abe, Y ; Agarwala, R. P ; Ambrožić, Ž... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Kristall und Technik

[Fortsetzung: Crystal Research and Technology] : Band 7, He... Kristall und Technik ; Band 7, Heft 11

Adametz, O. ; Auleytner, J. ; Binder, H. J.... - Reprint 2022 . , [2022]

Link: https://doi.org/10.1515/..

4

Crystal Research and Technology

Journal of Experimental and Industrial Crystallography ; Vo... Crystal Research and Technology ; Volume 23, Number 1

Auleytner, J ; Bak-Misiuk, J ; Berger, H... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

5

Physica status solidi

Volume 55, Number 2: October 16 Physica status solidi ; Volume 55, Number 2, A

Amelinckx, S ; Antonopoulos, J. G ; Appel, F... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

6

Physica status solidi

Volume 123, Number 2: June 1 Physica status solidi ; Volume 123, Number 2, B

Agnihotki, Neeta ; Agrawal, S. K ; Al-Ani, S. K. J... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

7

Physica status solidi

Volume 24, Number 2: December 1, 1967 Physica status solidi ; Volume 24, Number 2

Abdinov, D. Sh ; Abends, J ; Adam, O... - Reprint 2021 . , [2021]

Link: https://doi.org/10.1515/..

8

Recrystallisation and dopant diffusion in amorphised german..:

Klinger, D. ; Auleytner, J. ; Barcz, A..
Journal of Alloys and Compounds. 362 (2004) 1-2 - p. 265-268 , 2004

Link: https://doi.org/10.1016/..

9

Synchrotron X-ray diffraction studies of silicon implanted ..:

Wierzchowski, W. ; Wieteska, K. ; Auleytner, J...
Journal of Alloys and Compounds. 382 (2004) 1-2 - p. 146-152 , 2004

Link: https://doi.org/10.1016/..

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Structural changes induced by implantation with 3 MeV/amu n..:

Żymierska, D. ; Godwod, K. ; Auleytner, J....
Journal of Alloys and Compounds. 362 (2004) 1-2 - p. 248-253 , 2004

Link: https://doi.org/10.1016/..

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Nanostructure of near-surface Si layers formed by implantat..:

Klinger, D. ; Auleytner, J. ; Żymierska, D..
Journal of Alloys and Compounds. 362 (2004) 1-2 - p. 282-286 , 2004

Link: https://doi.org/10.1016/..

12

Pulsed laser annealing of Sn-implanted Si single crystal:

Klinger, D. ; Auleytner, J. ; Żymierska, D....
Journal of Applied Physics. 95 (2004) 5 - p. 2331-2336 , 2004

Link: https://doi.org/10.1063/..

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Mathematical analysis of the high-resolution reciprocal spa..:

Godwod, K ; ymierska, D ; Auleytner, J
Journal of Physics D: Applied Physics. 36 (2003) 10A - p. A148-A152 , 2003

Link: https://doi.org/10.1088/..

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X-ray diffractometric study of polycrystalline precipitates..:

Zymierska, D ; Godwod, K ; Auleytner, J
Journal of Physics D: Applied Physics. 36 (2003) 10A - p. A202-A204 , 2003

Link: https://doi.org/10.1088/..

15

Extended defect structure induced by pulsed laser annealing..:

Klinger, D. ; Lefeld-Sosnowska, M. ; Auleytner, J....
Journal of Alloys and Compounds. 328 (2001) 1-2 - p. 242-247 , 2001

Link: https://doi.org/10.1016/..