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Auret, F.D.
298  Ergebnisse:
Personensuche X
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1

Investigating the impact of physical vapour deposition of p..:

Barnard, A.W. ; Auret, F.D. ; Meyer, W.E.
Physica B: Condensed Matter.  685 (2024)  - p. 415989 , 2024
Link: https://doi.org/10.1016/..
 
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2

Laplace DLTS study of defects introduced in GaAs during spu..:

Taghizadeh, F. ; Janse van Rensburg, P.J. ; Meyer, W.E..
Materials Science in Semiconductor Processing.  152 (2022)  - p. 107015 , 2022
Link: https://doi.org/10.1016/..
 
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3

Determination of capture barrier energy of the E-center in ..:

Omotoso, E ; Paradzah, A T ; Igumbor, E...
Materials Research Express.  7 (2020)  2 - p. 025901 , 2020
Link: https://doi.org/10.1088/..
 
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4

The effect of alpha particle irradiation on electrical prop..:

Ahmed, M.E.I. ; Taghizadeh, F. ; Auret, F.D...
Materials Science in Semiconductor Processing.  101 (2019)  - p. 82-86 , 2019
Link: https://doi.org/10.1016/..
 
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5

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diod..:

Gora, V.E. ; Auret, F.D. ; Danga, H.T....
Materials Science and Engineering: B.  247 (2019)  - p. 114370 , 2019
Link: https://doi.org/10.1016/..
 
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6

Electronic properties and transformation kinetics of two pr..:

Taghizadeh, F. ; Janse van Rensburg, P.J. ; Ostvar, K...
Materials Science in Semiconductor Processing.  99 (2019)  - p. 23-27 , 2019
Link: https://doi.org/10.1016/..
 
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7

In Situ Study of Low-Temperature Irradiation-Induced Defect..:

Tunhuma, S. M. ; Auret, F. D. ; Danga, H. T...
Journal of Electronic Materials.  48 (2019)  6 - p. 3849-3853 , 2019
Link: https://doi.org/10.1007/..
 
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8

Defects in swift heavy ion irradiated n-4H-SiC:

Tunhuma, S.M. ; Diale, M. ; Nel, J.M....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  460 (2019)  - p. 119-124 , 2019
Link: https://doi.org/10.1016/..
 
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9

The study of low temperature irradiation induced defects in..:

Danga, H.T. ; Tunhuma, S.M. ; Auret, F.D....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  442 (2019)  - p. 28-30 , 2019
Link: https://doi.org/10.1016/..
 
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10

Electrical characterization of defects introduced during sp..:

Tunhuma, Shandirai M. ; Auret, F.D. ; Legodi, M.J...
Materials Science in Semiconductor Processing.  81 (2018)  - p. 122-126 , 2018
Link: https://doi.org/10.1016/..
 
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11

Electrical characterisation of deep level defects created b..:

Omotoso, E. ; Paradzah, A.T. ; Janse van Rensburg, P.J....
Surface and Coatings Technology.  355 (2018)  - p. 2-6 , 2018
Link: https://doi.org/10.1016/..
 
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12

Characterisation of Cs ion implanted GaN by DLTS:

Ngoepe, P.N.M. ; Meyer, W.E. ; Auret, F.D....
Physica B: Condensed Matter.  535 (2018)  - p. 96-98 , 2018
Link: https://doi.org/10.1016/..
 
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13

Comparison of nickel, cobalt, palladium, and tungsten Schot..:

Gora, V.E. ; Chawanda, A. ; Nyamhere, C....
Physica B: Condensed Matter.  535 (2018)  - p. 333-337 , 2018
Link: https://doi.org/10.1016/..
 
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14

Annealing of the Sb-vacancy and a closely related radiation..:

Barnard, Abraham W. ; Auret, F.D. ; Meyer, W.E.
Physica B: Condensed Matter.  535 (2018)  - p. 242-244 , 2018
Link: https://doi.org/10.1016/..
 
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15

Defects induced by solid state reactions at the tungsten-si..:

Tunhuma, S. M. ; Diale, M. ; Legodi, M. J....
Journal of Applied Physics.  123 (2018)  16 - p. , 2018
Link: https://doi.org/10.1063/..
 
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