BORGHESE, A.
1369  Ergebnisse:
Personensuche X
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1

Substantial Improvement of the Short-circuit Capability of ..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Boccarossa, M. ; Maresca, L. ; Borghese, A.... - p. 88-91 , 2024
 
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5

Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Di..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Boccarossa, M. ; Maresca, L. ; Borghese, A.... - p. 354-357 , 2023
 
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11

The first seven months of the 2020 X-ray outburst of the ma..:

Borghese, A ; Coti Zelati, F ; Israel, G L...
Monthly Notices of the Royal Astronomical Society.  516 (2022)  1 - p. 602-616 , 2022
 
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12

An Electrothermal Compact Model for SiC MOSFETs Based on SP..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Borghese, A. ; Riccio, M. ; Maresca, L... - p. 37-40 , 2022
 
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13

The X-ray evolution and geometry of the 2018 outburst of XT..:

Borghese, A ; Rea, N ; Turolla, R...
Monthly Notices of the Royal Astronomical Society.  504 (2021)  4 - p. 5244-5257 , 2021
 
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14

SiC MOSFETs soft and hard failure modes: functional analysi..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Richardeau, F. ; Boige, F. ; Castellazzi, A.... - p. 170-173 , 2020
 
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15

Gate leakage current sensing for in situ temperature monito..:

Borghese, A. ; Riccio, M. ; Longobardi, G....
Microelectronics Reliability.  114 (2020)  - p. 113762 , 2020
 
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