E-LIB Suche - Ergebnisse für: Bahat-Treidel, Eldad

1

High-voltage normally OFF GaN power transistors on SiC and ..:

Hilt, Oliver ; Bahat-Treidel, Eldad ; Knauer, Arne...
MRS Bulletin. 40 (2015) 5 - p. 418-424 , 2015

Link: https://doi.org/10.1557/..

2

GaN-Based Power HEMTs: Parasitic, Reliability and High Fiel..:

Meneghesso, Gaudenzio ; Meneghini, Matteo ; Bisi, Davide...
ECS Transactions. 58 (2013) 4 - p. 187-198 , 2013

Link: https://doi.org/10.1149/..

3

Normally-Off GaN Transistors for Power Switching Applicatio..:

Hilt, Oliver ; Bahat-Treidel, Eldad ; Brunner, Frank...
ECS Transactions. 58 (2013) 4 - p. 145-154 , 2013

Link: https://doi.org/10.1149/..

4

Device Breakdown and Dynamic effects in GaN Power Switching..:

Würfl, Joachim ; Bahat-Treidel, Eldad ; Brunner, Frank...
ECS Transactions. 50 (2013) 3 - p. 211-222 , 2013

Link: https://doi.org/10.1149/..

5

(Invited) Technological Approaches Towards High Voltage, Fa..:

Würfl, Joachim ; Hilt, Oliver ; Bahat-Treidel, Eldad...
ECS Transactions. 52 (2013) 1 - p. 979-989 , 2013

Link: https://doi.org/10.1149/..

6

GaN Based HEMTs for High Voltage Operation. Design, Technol..:

Bahat-Treidel, Eldad , 2012

Link: http://nbn-resolving.de/..

7

GaN-based HEMTs for high voltage operation: design, technol..

Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik, Band 22

Bahat-Treidel, Eldad - 1. Auflage . , 2012

Link: https://search.ebscohost..

8

Impact of buffer composition on the dynamic on-state resist..:

, In: 2012 24th International Symposium on Power Semiconductor Devices and ICs,

Hilt, Oliver ; Bahat-Treidel, Eldad ; Cho, Eunjung.. - p. 345-348 , 2012

Link: https://doi.org/10.1109/..

9

(Invited) High Voltage Normally-Off Transistors and Efficie..:

Wuerfl, Joachim ; Bahat-Treidel, Eldad ; Brunner, Frank...
ECS Transactions. 41 (2011) 8 - p. 127-138 , 2011

Link: https://doi.org/10.1149/..

10

Characterization of stress degradation effects and thermal ..:

Glowacki, A. ; Laskowski, P. ; Boit, C....
Microelectronics Reliability. 49 (2009) 9-11 - p. 1211-1215 , 2009

Link: https://doi.org/10.1016/..

11

Experimental study of phase-step broadening by fringing fie..:

Bahat-Treidel, Eldad ; Apter, Boris ; Efron, Uzi
Applied Optics. 44 (2005) 15 - p. 2989 , 2005

Link: https://doi.org/10.1364/..

12

Fringing-field effect in liquid-crystal beam-steering devic..:

Efron, Uzi ; Apter, Boris ; Bahat-Treidel, Eldad
Journal of the Optical Society of America A. 21 (2004) 10 - p. 1996 , 2004

Link: https://doi.org/10.1364/..

13

On the fringing-field effect in liquid-crystal beam-steerin..:

Apter, Boris ; Efron, Uzi ; Bahat-Treidel, Eldad
Applied Optics. 43 (2004) 1 - p. 11 , 2004

Link: https://doi.org/10.1364/..

14

Investigation of atomic layer deposition methods of Al2O3 o..:

Tadmor, Liad ; Vandenbroucke, Sofie S. T. ; Bahat Treidel, Eldad...
Journal of Applied Physics. 135 (2024) 8 - p. , 2024

Link: https://doi.org/10.1063/..

15

Lateral and vertical power transistors in GaN and Ga2O3:

Hilt, Oliver ; Bahat Treidel, Eldad ; Wolf, Mihaela...
IET Power Electronics. 12 (2019) 15 - p. 3919-3927 , 2019

Link: https://doi.org/10.1049/..