Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Baik, K.H ( author )
291  Ergebnisse:
Personensuche X
?
1

Dry etching characteristics of GaN for blue/green light-emi..:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States ( host institution ) ; Baik, K.H. ( author ) ; Pearton, S.J. ( author )
Applied Surface Science.  , 2009
Link: https://doi.org/10.1016/..
 
?
2

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN..:

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution ) ; LaRoche, J.R. ( author ) ; Luo, B. ( author )...
Solid State Electronics.  , 2004
Link: https://doi.org/10.1016/..
 
?
3

2.6 A, 0.69 MW cm −2 single-chip bulk GaN p-i-n rectifier:

Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan ( host institution ) ; Irokawa, Y. ( author ) ; Luo, B. ( author )...
Solid State Electronics.  , 2004
Link: https://doi.org/10.1016/..
 
?
4

Si + ion implanted MPS bulk GaN diodes:

Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan ( host institution ) ; Irokawa, Y. ( author ) ; Kim, J. ( author )...
Solid State Electronics.  , 2004
Link: https://doi.org/10.1016/..
 
?
5

RF performance of HVPE-grown AlGaN/GaN HEMTs:

TDI, Inc., Silver Spring, MD 20904, USA ( host institution ) ; Mastro, M.A. ( author ) ; Tsvetkov, D. ( author )...
Solid State Electronics.  , 2004
Link: https://doi.org/10.1016/..
 
?
6

Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky cont..:

Department of Materials Science and Engineering, University of Florida, PO Box 116400, Gainesville, FL 32611, USA ( host institution ) ; Ip, K ( author ) ; Gila, B.P ( author )...
Applied Surface Science.  , 2004
Link: https://doi.org/10.1016/..
 
?
7

Design of junction termination structures for GaN Schottky ..:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Baik, K.H. ( author ) ; Irokawa, Y. ( author )...
Solid State Electronics.  , 2003
Link: https://doi.org/10.1016/..
 
?
8

Hydride vapor phase epitaxy-grown AlGaN/GaN high electron m..:

TDI, Inc., Silver Spring, MD 20904, USA ( host institution ) ; Mastro, M.A. ( author ) ; Tsvetkov, D. ( author )...
Solid State Electronics.  , 2003
Link: https://doi.org/10.1016/..
 
?
9

Temperature dependence of forward current characteristics o..:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Baik, K.H. ( author ) ; Irokawa, Y. ( author )...
Solid State Electronics.  , 2003
Link: https://doi.org/10.1016/..
 
?
10

Electrical characteristics of p-GaN Schottky rectifiers aft..:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Baik, K.H ( author ) ; Luo, B ( author )...
Solid State Electronics.  , 2002
Link: https://doi.org/10.1016/..
 
?
11

Influence of SiO 2 PECVD layers on p-GaN rectifiers:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Baik, K.H. ( author ) ; Luo, B. ( author )..
Solid State Electronics.  , 2002
Link: https://doi.org/10.1016/..
 
?
12

High current bulk GaN Schottky rectifiers:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Ip, K ( author ) ; Baik, K.H ( author )...
Solid State Electronics.  , 2002
Link: https://doi.org/10.1016/..
 
?
13

Etch characteristics of HfO 2 films on Si substrates:

Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611, USA ( host institution ) ; Norasetthekul, S. ( author ) ; Park, P.Y. ( author )...
Applied Surface Science.  , 2002
Link: https://doi.org/10.1016/..
 
?
14

Dry etch chemistries for TiO 2 thin films:

Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611, USA ( host institution ) ; Norasetthekul, S. ( author ) ; Park, P.Y. ( author )...
Applied Surface Science.  , 2001
Link: https://doi.org/10.1016/..
 
?
15

Effect of PECVD of SiO 2 passivation layers on GaN and InGa:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Baik, K.H. ( author ) ; Park, P.Y. ( author )...
Solid State Electronics.  , 2001
Link: https://doi.org/10.1016/..
 
1-15