Baishya, B.
100  Ergebnisse:
Personensuche X
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1

Pentacene thin film transistors using La2O3 as gate insulat..:

Sarma, R. ; Saikia, D. ; Konwar, K..
Indian Journal of Physics.  84 (2010)  5 - p. 547-552 , 2010
 
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3

Some studies on mixed semiconductor thin film transistors:

SINGH, P. ; BAISHYA, B.
International Journal of Electronics.  65 (1988)  2 - p. 205-213 , 1988
 
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4

Some studies on thin film transistors (TFTs) with Er2O3 as ..:

Singh, P. ; Baishya, B.
Physica Status Solidi (a).  101 (1987)  2 - p. K173-K177 , 1987
 
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5

Thin film transistors with Er2O3 gate insulators:

Singh, P. ; Baishya, B.
Thin Solid Films.  148 (1987)  2 - p. 203-207 , 1987
 
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6

Some studies of mixed oxide thin film transistors:

SINGH, P. ; BAISHYA, B.
International Journal of Electronics.  63 (1987)  5 - p. 661-668 , 1987
 
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7

Suitability of Rare-Earth Oxides for Use in Thin Film Trans..:

Singh, P. ; Baishya, B.
Physica Status Solidi (a).  104 (1987)  2 - p. 885-889 , 1987
 
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8

'Mixed semiconductor' thin film transistors:

SINGH, P. ; BAISHYA, B.
International Journal of Electronics.  62 (1987)  1 - p. 87-91 , 1987
 
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10

CdS/Nd2O3 and CdSe/Nd2O3 thin film transistors:

Singh, P. ; Baishya, B.
Thin Solid Films.  141 (1986)  2 - p. 179-182 , 1986
 
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11

CdS and CdSe thin-film transistors employing 'mixed oxide' ..:

SINGH, P. ; BAISHYA, B.
International Journal of Electronics.  61 (1986)  4 - p. 513-516 , 1986
 
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13

A CdS-Pr6O11thin film transistor:

DEKA, P. K. ; BAISHYA, B.
International Journal of Electronics.  57 (1984)  5 - p. 677-680 , 1984
 
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