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Baliga, B.Jayant
499  Ergebnisse:
Personensuche X
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1

FET Junction Temperature Monitoring Using Novel On-Chip Sol..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),
Narwal, Ramandeep ; Agarwal, Aditi ; Cheng, Tzu-Hsuan... - p. 2475-2482 , 2024
Link: https://doi.org/10.1109/..
 
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2

The IGBT device: physics, design and applications of the in..:

Baliga, B. Jayant - Second edition. . , 2023
Link: https://www.sciencedirec..
 
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3

Bidirectional Three-phase Current Source Converter based Bu..:

, In: 2023 IEEE Transportation Electrification Conference & Expo (ITEC),
Narwal, Ramandeep ; Bhattacharya, Subhashish ; Baliga, B. Jayant. - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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4

Design and Optimization of High-frequency Transformer for I..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),
Wong, Isaac ; Narwal, Ramandeep ; Bhattacharya, Subhashish.. - p. 5853-5858 , 2023
Link: https://doi.org/10.1109/..
 
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5

The BiDFET Device and Its Impact on Converters:

Baliga, B. Jayant ; Hopkins, Douglas ; Bhattacharya, Subhashish...
IEEE Power Electronics Magazine.  10 (2023)  1 - p. 20-27 , 2023
Link: https://doi.org/10.1109/..
 
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6

Isolated Single-stage Three-phase AC/DC Converter using Bid..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),
Narwal, Ramandeep ; Wong, Isaac ; Bhattacharya, Subhashish.. - p. 2230-2237 , 2023
Link: https://doi.org/10.1109/..
 
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7

Analysis and Characterization of Four-quadrant Switches bas..:

, In: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC),
Narwal, Ramandeep ; Rawat, Shubham ; Kanale, Ajit... - p. 209-216 , 2023
Link: https://doi.org/10.1109/..
 
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8

Power Conversion Systems Enabled by SiC BiDFET Device:

Bhattacharya, Subhashish ; Narwal, Ramandeep ; Shah, Suyash Sushilkumar...
IEEE Power Electronics Magazine.  10 (2023)  1 - p. 39-43 , 2023
Link: https://doi.org/10.1109/..
 
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9

Unclamped Inductive Load Avalanche Capability of the BaSIC(..:

, In: 2023 IEEE 14th International Conference on Power Electronics and Drive Systems (PEDS),
Kanale, Ajit ; Baliga, B. Jayant ; Bhattacharya, Subhashish - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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10

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Di..:

Narasimhan, Sneha ; Kanale, Ajit ; Bhattacharya, Subhashish.
IEEE Access.  11 (2023)  - p. 89277-89289 , 2023
Link: https://doi.org/10.1109/..
 
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11

An Academic's Perspective on SiC Power Devices: Retrospecti..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Baliga, B. Jayant - p. 1-6 , 2022
Link: https://doi.org/10.1109/..
 
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12

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-e..:

, In: 2022 IEEE Energy Conversion Congress and Exposition (ECCE),
Kanale, Ajit ; Cheng, Tzu-Hsuan ; Narwal, Ramandeep... - p. 1-7 , 2022
Link: https://doi.org/10.1109/..
 
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13

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Powe..:

Agarwal, Aditi ; Baliga, B. Jayant
IEEE Transactions on Electron Devices.  69 (2022)  3 - p. 1233-1241 , 2022
Link: https://doi.org/10.1109/..
 
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14

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor:..:

Kanale, Ajit ; Agarwal, Aditi ; Baliga, B. Jayant.
IEEE Transactions on Power Electronics.  37 (2022)  9 - p. 10112-10116 , 2022
Link: https://doi.org/10.1109/..
 
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15

Optimization of linear cell 4H-SiC power JBSFETs: Impact of..:

Agarwal, Aditi ; Baliga, B. Jayant
Power Electronic Devices and Components.  2 (2022)  - p. 100008 , 2022
Link: https://doi.org/10.1016/..
 
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