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Baudot, S.
1670  Ergebnisse:
Personensuche X
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1

Buried Power Rail Integration with Si FinFETs for CMOS Scal..:

, In: 2020 IEEE Symposium on VLSI Technology,
Gupta, A. ; Mertens, H. ; Tao, Z.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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2

First Monolithic Integration of 3D Complementary FET (CFET)..:

, In: 2020 IEEE Symposium on VLSI Technology,
Subramanian, S. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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3

Addressing Key Challenges for SiGe-pFin Technologies: Fin I..:

, In: 2020 IEEE Symposium on VLSI Technology,
Arimura, H. ; Capogreco, E. ; Wostyn, K.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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4

Very Low Temperature Epitaxy of Group-IV Semiconductors for..:

Porret, C. ; Hikavyy, A. ; Granados, J. F. Gomez...
ECS Journal of Solid State Science and Technology.  8 (2019)  8 - p. P392-P399 , 2019
Link: https://doi.org/10.1149/..
 
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5

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si g..:

Boujamaa, R. ; Martinez, E. ; Pierre, F....
Applied Surface Science.  335 (2015)  - p. 71-77 , 2015
Link: https://doi.org/10.1016/..
 
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6

Investigating doping effects on high-κ metal gate stack for..:

Leroux, C. ; Baudot, S. ; Charbonnier, M....
Solid-State Electronics.  88 (2013)  - p. 21-26 , 2013
Link: https://doi.org/10.1016/..
 
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7

Time-Dependent Relaxation of Strained Silicon-on-Insulator ..:

Mastropietro, F. ; Eymery, J. ; Carbone, G....
Physical Review Letters.  111 (2013)  21 - p. , 2013
Link: https://doi.org/10.1103/..
 
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8

Influence of La on the electrical properties of HfSiON: Fro..:

Hackenberg, M. ; Pichler, P. ; Baudot, S....
Microelectronic Engineering.  109 (2013)  - p. 200-203 , 2013
Link: https://doi.org/10.1016/..
 
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9

Three-dimensional distribution of Al in high-k metal gate: ..:

Panciera, F. ; Baudot, S. ; Hoummada, K....
Applied Physics Letters.  100 (2012)  20 - p. , 2012
Link: https://doi.org/10.1063/..
 
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10

Impact of high temperature annealing on La diffusion and fl..:

Boujamaa, R. ; Baudot, S. ; Rochat, N....
Journal of Applied Physics.  111 (2012)  5 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Comparison of radio frequency physical vapor deposition tar..:

Baudot, S. ; Caubet, P. ; Grégoire, M....
Microelectronic Engineering.  88 (2011)  5 - p. 569-572 , 2011
Link: https://doi.org/10.1016/..
 
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12

Dual strained channel CMOS in FDSOI architecture: New insig..:

Le Royer, C. ; Cassé, M. ; Cooper, D....
Solid-State Electronics.  65-66 (2011)  - p. 9-15 , 2011
Link: https://doi.org/10.1016/..
 
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13

Understanding reversal effects of metallic aluminum introdu..:

Baudot, S. ; Leroux, C. ; Chave, F....
Microelectronic Engineering.  88 (2011)  7 - p. 1305-1308 , 2011
Link: https://doi.org/10.1016/..
 
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14

Electrical and diffraction characterization of short and na..:

Baudot, S. ; Andrieu, F. ; Faynot, O..
Solid-State Electronics.  54 (2010)  9 - p. 861-869 , 2010
Link: https://doi.org/10.1016/..
 
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15

Modeling and direct extraction of band offset induced by st..:

Garros, X. ; Rochette, F. ; Andrieu, F....
Journal of Applied Physics.  105 (2009)  11 - p. , 2009
Link: https://doi.org/10.1063/..
 
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