Beckmann, Karsten
153  Ergebnisse:
Personensuche X
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5

Three Programming States in Bilayer Ga–Sb Phase Change Memo..:

Gong, Haibo ; Ume, Rubab ; Tokranov, Vadim...
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3511-3516 , 2023
 
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7

Effect of Resistance variability in Vector Matrix Multiplic..:

, In: 2023 IEEE 32nd Microelectronics Design & Test Symposium (MDTS),
 
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8

Analog NVM Synapse for Hardware-Aware Neural Network Traini..:

, In: 2023 IEEE 32nd Microelectronics Design & Test Symposium (MDTS),
 
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9

Flow-Based Computing of NOR Logic Using ReRAM Devices:

, In: 2023 IEEE 32nd Microelectronics Design & Test Symposium (MDTS),
 
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10

Investigating Device Degradation and Revival in Resistive R..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
 
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11

Failure Analysis of 65nm CMOS Integrated Nanoscale ReRAM De..:

, In: 2022 IEEE International Integrated Reliability Workshop (IIRW),
 
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12

Impact of Switching Variability, Memory Window, and Tempera..:

, In: 2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS),
 
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14

Detecting Temporal Correlation on HfO2 Based RRAM on 65nm C..:

, In: 2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS),
 
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15

Exploring Model Stability of Deep Neural Networks for Relia..:

Krishnan, Gokul ; Yang, Li ; Sun, Jingbo...
IEEE Transactions on Computers.  71 (2022)  11 - p. 2740-2752 , 2022
 
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