Beister, G.
39  Ergebnisse:
Personensuche X
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1

Physica status solidi 

Volume 91, Number 1: September 16  Physica status solidi ; Volume 91, Number 1, A
Abass, A. K ; Abdullin, Kh. A ; Adhikari, M... - Reprint 2021 . , [2022]
 
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2

Physica status solidi 

Volume 105, Number 1: January 16  Physica status solidi ; Volume 105, Number 1, A
Acharya, P. K ; Acharyulu, B. S. V. S. R ; Al-Saleh, K. A... - Reprint 2021 . , [2021]
 
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3

Comparison of surface and bulk contributions to non-radiati..:

Beister, G ; Wenzel, H
Semiconductor Science and Technology.  19 (2004)  3 - p. 494-500 , 2004
 
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5

Defect recognition via longitudinal mode analysis of high p..:

Klehr, A. ; Beister, G. ; Erbert, G....
Journal of Applied Physics.  90 (2001)  1 - p. 43-47 , 2001
 
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6

MOVPE growth of AlGaAs/GaInP diode lasers:

Bugge, F. ; Knauer, A. ; Gramlich, S....
Journal of Electronic Materials.  29 (2000)  1 - p. 57-61 , 2000
 
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7

Non-radiative current in InGaAs/AlGaAs laser diodes as a me..:

Beister, G. ; Maege, J. ; Erbert, G..
Solid-State Electronics.  42 (1998)  11 - p. 1939-1945 , 1998
 
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8

Simple method for examining sulphur passivation of facets i..:

Beister, G. ; Maege, J. ; Gutsche, D....
Applied Physics Letters.  68 (1996)  18 - p. 2467-2468 , 1996
 
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10

Progress in large-area glass coatings by high-rate sputteri..:

Beister, G
Surface and Coatings Technology.  76-77 (1995)  - p. 776-785 , 1995
 
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12

Potential sources of degradation in InGaAs/GaAs laser diode:

Rechenberg, I. ; Beister, G. ; Bugge, F....
Materials Science and Engineering: B.  28 (1994)  1-3 - p. 310-313 , 1994
 
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13

Effect of growth interruption on performance of AlGaAs/InGa..:

Bugge, F. ; Beister, G. ; Erbert, G....
Journal of Crystal Growth.  145 (1994)  1-4 - p. 907-910 , 1994
 
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15

Evaluation of electroluminescence current and voltage depen..:

Beister, G.
Solid-State Electronics.  34 (1991)  11 - p. 1255-1262 , 1991
 
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