E-LIB Suche - Ergebnisse für: Belanche, Manuel

1

Aluminum channeling in 4H-SiC by high-energy implantation a..:

Belanche, Manuel ; Yonezawa, Yoshiyuki ; Heller, René...
Materials Science in Semiconductor Processing. 179 (2024) - p. 108461 , 2024

Link: https://doi.org/10.1016/..

2

Dual configuration of shallow acceptor levels in 4H-SiC:

Bathen, Marianne Etzelmüller ; Kumar, Piyush ; Ghezellou, Misagh...
Materials Science in Semiconductor Processing. 177 (2024) - p. 108360 , 2024

Link: https://doi.org/10.1016/..

3

Energy-Dependent Impact of Proton Irradiation on 4H-SiC Sch..:

Kumar, Piyush ; Belanche, Manuel ; Für, Natalija...
Materials Science Forum. 1092 (2023) - p. 187-192 , 2023

Link: https://doi.org/10.4028/..

4

Minority Carrier Traps Induced by Neutron Reactions with 4H..:

Belanche, Manuel ; Bathen, Marianne Etzelmüller ; Kumar, Piyush...
Defect and Diffusion Forum. 426 (2023) - p. 23-28 , 2023

Link: https://doi.org/10.4028/..

5

Small-Signal Impedance and Split C-V Characterization of Hi..:

Race, Salvatore ; Kovacevic-Badstubner, Ivana ; Stark, Roger...
Materials Science Forum. 1091 (2023) - p. 67-71 , 2023

Link: https://doi.org/10.4028/..

6

Investigation of Electrically Active Defects in SiC Power D..:

Für, N. ; Belanche, Manuel ; Martinella, C....
IEEE Transactions on Nuclear Science. 70 (2023) 8 - p. 1892-1899 , 2023

Link: https://doi.org/10.1109/..

7

Phosphorous and Aluminum Implantation for MOSFET Manufactur..:

Woerle, Judith ; Belanche, Manuel ; Negri, Marco...
Materials Science Forum. 1062 (2022) - p. 263-267 , 2022

Link: https://doi.org/10.4028/..

8

Sensitivity of Dit Extraction at the SiO2/SiC Interface Usi..:

Belanche, Manuel ; Kumar, Piyush ; Woerle, Judith..
Materials Science Forum. 1062 (2022) - p. 346-350 , 2022

Link: https://doi.org/10.4028/..

9

Vertical Power SiC MOSFETs with High-k Gate Dielectrics and..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Wirths, Stephan ; Arango, Yulieth ; Mihaila, Andrei... - p. 226-229 , 2020

Link: https://doi.org/10.1109/..

10

Low formaldehyde emission particleboard panels realized thr..:

Amazio, Paola ; Avella, Maurizio ; Emanuela Errico, Maria...
Journal of Applied Polymer Science. 122 (2011) 4 - p. 2779-2788 , 2011

Link: https://doi.org/10.1002/..

11

Sensitivity of Dit extraction at the SiO2/SiC interface usi..:

Belanche, Manuel ; Kumar, Piyush ; Woerle, Judith...
info:eu-repo/semantics/altIdentifier/doi/10.4028/p-fnktjf. , 2022

Link: https://hdl.handle.net/2..

12

Phosphorous and Aluminum Implantation for MOSFET Manufactur..:

Woerle, Judith ; id_orcid:0 000-0001-6363-0315 ; Belanche, Manuel...
info:eu-repo/semantics/altIdentifier/doi/10.4028/p-oneqg9. , 2022

Link: https://hdl.handle.net/2..

13

Small-Signal Impedance and Split CV Characterization of Hig..:

Race, Salvatore ; Kovacevic-Badstuebner, Ivana ; id_orcid:0 000-0001-6960-2470...
info:eu-repo/semantics/altIdentifier/doi/10.4028/p-2388hx. , 2023

Link: https://hdl.handle.net/2..

14

Investigation of Electrically Active Defects in SiC Power D..:

Für, Natalija ; Belanche Guadas, Manuel ; id_orcid:0 000-0002-1101-9554...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2023.3242760. , 2023

Link: https://hdl.handle.net/2..

15

Minority Carrier Traps Induced by Neutron Reactions with 4H..:

Belanche Guadas, Manuel ; id_orcid:0 000-0002-1101-9554 ; Bathen, Marianne Etzelmüller...
info:eu-repo/semantics/altIdentifier/doi/10.4028/p-724d7y. , 2023

Link: https://hdl.handle.net/2..