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Bengoechea-Encabo, A.
65  Ergebnisse:
Personensuche X
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1

Ordered arrays of defect-free GaN nanocolumns with very nar..:

Fernando-Saavedra, A. ; Albert, S. ; Bengoechea-Encabo, A....
Journal of Crystal Growth.  525 (2019)  - p. 125189 , 2019
Link: https://doi.org/10.1016/..
 
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2

Oxygen-related photoluminescence quenching in selectively g..:

Bengoechea-Encabo, A. ; Albert, S. ; Sánchez-Garcia, M.A..
Materials Science in Semiconductor Processing.  55 (2016)  - p. 59-62 , 2016
Link: https://doi.org/10.1016/..
 
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3

Crystallographically uniform arrays of ordered (In)GaN nano..:

Gačević, Ž. ; Bengoechea-Encabo, A. ; Albert, S....
Journal of Applied Physics.  117 (2015)  3 - p. , 2015
Link: https://doi.org/10.1063/..
 
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4

Electron tomography of (In,Ga)N insertions in GaN nanocolum..:

Niehle, M. ; Trampert, A. ; Albert, S...
APL Materials.  3 (2015)  3 - p. 036102 , 2015
Link: https://doi.org/10.1063/..
 
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5

Selective area growth of GaN nanostructures: A key to produ..:

Albert, S. ; Bengoechea-Encabo, A. ; Zuniga-Perez, J....
Applied Physics Letters.  105 (2014)  9 - p. , 2014
Link: https://doi.org/10.1063/..
 
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6

Growth of InGaN/GaN core–shell structures on selectively et..:

Albert, S. ; Bengoechea-Encabo, A. ; Sabido-Siller, M....
Journal of Crystal Growth.  392 (2014)  - p. 5-10 , 2014
Link: https://doi.org/10.1016/..
 
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7

Monolithic integration of InGaN segments emitting in the bl..:

Albert, S. ; Bengoechea-Encabo, A. ; Kong, X....
Applied Physics Letters.  102 (2013)  18 - p. 181103 , 2013
Link: https://doi.org/10.1063/..
 
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8

Selective area growth and characterization of InGaN nanocol..:

Albert, S. ; Bengoechea-Encabo, A. ; Sanchez-Garcia, M. A...
Journal of Applied Physics.  113 (2013)  11 - p. , 2013
Link: https://doi.org/10.1063/..
 
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9

Selective area growth and characterization of GaN nanocolum..:

Bengoechea-Encabo, A. ; Albert, S. ; Zuñiga-Perez, J....
Applied Physics Letters.  103 (2013)  24 - p. , 2013
Link: https://doi.org/10.1063/..
 
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10

Investigation of AlInN barrier ISFET structures with GaN ca..:

Brazzini, T. ; Bengoechea-Encabo, A. ; Sánchez-García, M.A..
Sensors and Actuators B: Chemical.  176 (2013)  - p. 704-707 , 2013
Link: https://doi.org/10.1016/..
 
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11

Erratum: "Monolithic integration of InGaN segments emitting..:

Albert, S. ; Bengoechea-Encabo, A. ; Kong, X....
Applied Physics Letters.  102 (2013)  21 - p. , 2013
Link: https://doi.org/10.1063/..
 
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12

Selective area growth and characterization of InGaN nano-di..:

Albert, S. ; Bengoechea-Encabo, A. ; Lefebvre, P....
Applied Physics Letters.  100 (2012)  23 - p. , 2012
Link: https://doi.org/10.1063/..
 
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13

Selective area growth of a- and c-plane GaN nanocolumns by ..:

Bengoechea-Encabo, A. ; Albert, S. ; Sanchez-Garcia, M.A....
Journal of Crystal Growth.  353 (2012)  1 - p. 1-4 , 2012
Link: https://doi.org/10.1016/..
 
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14

Understanding the selective area growth of GaN nanocolumns ..:

Bengoechea-Encabo, A. ; Barbagini, F. ; Fernandez-Garrido, S....
Journal of Crystal Growth.  325 (2011)  1 - p. 89-92 , 2011
Link: https://doi.org/10.1016/..
 
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15

Emission control of InGaN nanocolumns grown by molecular-be..:

Albert, S. ; Bengoechea-Encabo, A. ; Lefebvre, P....
Applied Physics Letters.  99 (2011)  13 - p. , 2011
Link: https://doi.org/10.1063/..
 
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