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X
Bensaoula, A.
115  Ergebnisse:
Personensuche X
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1

Influence of HiPIMS pulse widths on the deposition behaviou..:

Lapeyre, L. ; Wieczerzak, K. ; Hain, C....
Surface and Coatings Technology.  450 (2022)  - p. 129002 , 2022
Link: https://doi.org/10.1016/..
 
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2

Propagation of THz acoustic wave packets in GaN at room tem..:

Maznev, A. A. ; Hung, T.-C. ; Yao, Y.-T....
Applied Physics Letters.  112 (2018)  6 - p. , 2018
Link: https://doi.org/10.1063/..
 
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3

GaN nanorod arrays as a high-stability field emitter:

Seo, H. W. ; Tu, L. W. ; Chen, M....
Journal of the Korean Physical Society.  71 (2017)  6 - p. 340-344 , 2017
Link: https://doi.org/10.3938/..
 
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4

Effect of N2* and N on GaN nanocolumns grown on Si(111) by ..:

Debnath, A. ; Gandhi, J. S. ; Kesaria, M....
Journal of Applied Physics.  119 (2016)  10 - p. , 2016
Link: https://doi.org/10.1063/..
 
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5

High-pressure Raman scattering in InGaN heteroepitaxial lay..:

Oliva, R. ; Ibáñez, J. ; Cuscó, R....
Applied Physics Letters.  104 (2014)  14 - p. , 2014
Link: https://doi.org/10.1063/..
 
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6

A photoluminescence study of plasma reactive ion etching-in..:

Mouffak, Z. ; Bensaoula, A. ; Trombetta, L.
Journal of Semiconductors.  35 (2014)  11 - p. 113003 , 2014
Link: https://doi.org/10.1088/..
 
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7

Multiphononon resonant Raman scattering in He+-implanted In..:

Domènech-Amador, N ; Cuscó, R ; García-Hernansanz, R...
Semiconductor Science and Technology.  29 (2014)  4 - p. 045013 , 2014
Link: https://doi.org/10.1088/..
 
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8

Dynamic range and sensitivity of field emission pressure se..:

Badi, N. ; Bensaoula, A. ; Nair, A.M.
Applied Surface Science.  285 (2013)  - p. 907-911 , 2013
Link: https://doi.org/10.1016/..
 
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9

Determination of optical constants and stoichiometry of BxO..:

Badi, N. ; Morales, M. ; Boney, C...
Journal of Non-Crystalline Solids.  382 (2013)  - p. 1-4 , 2013
Link: https://doi.org/10.1016/..
 
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10

Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN..:

Oliva, R. ; Ibáñez, J. ; Cuscó, R....
Journal of Applied Physics.  111 (2012)  6 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Simulation of a solar cell based on InGaN:

Vilbois, L.A. ; Cheknane, A. ; Bensaoula, A...
Energy Procedia.  18 (2012)  - p. 795-806 , 2012
Link: https://doi.org/10.1016/..
 
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12

Brillouin scattering determination of the surface acoustic ..:

Jiménez-Riobóo, R. J. ; Cuscó, R. ; Oliva, R....
Applied Physics Letters.  101 (2012)  6 - p. 062103 , 2012
Link: https://doi.org/10.1063/..
 
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13

Raman scattering by folded acoustic phonons in InGaN/GaN su..:

Ibáñez, J. ; Rapaport, A. ; Boney, C....
Journal of Raman Spectroscopy.  43 (2011)  2 - p. 237-240 , 2011
Link: https://doi.org/10.1002/..
 
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14

Quantitative depth profile analysis of boron implanted sili..:

Pisonero, J. ; Lobo, L. ; Bordel, N....
Solar Energy Materials and Solar Cells.  94 (2010)  8 - p. 1352-1357 , 2010
Link: https://doi.org/10.1016/..
 
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15

Field emission pressure sensors with non-silicon membranes:

Badi, N. ; Nair, A.M. ; Bensaoula, A.
Applied Surface Science.  256 (2010)  16 - p. 4990-4994 , 2010
Link: https://doi.org/10.1016/..
 
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