E-LIB Suche - Ergebnisse für: Bescond, M.

1

Rate equations description of the asymmetric double barrier..:

Philippe, A. ; Carosella, F. ; Zhu, X....
Journal of Applied Physics. 134 (2023) 12 - p. , 2023

Link: https://doi.org/10.1063/..

2

Thermionic cooling devices based on resonant-tunneling AlGa..:

Bescond, M ; Logoteta, D ; Michelini, F...
Journal of Physics: Condensed Matter. 30 (2018) 6 - p. 064005 , 2018

Link: https://doi.org/10.1088/..

3

Existe-t-il un risque professionnel pour les soignants appl..:

Durand-Moreau, Q. ; Bescond-Ollivier, C. ; Loddé, B....
Annales de Dermatologie et de Vénéréologie. 144 (2017) 12 - p. S233 , 2017

Link: https://doi.org/10.1016/..

4

Comprehensive analyses of core–shell InGaN/GaN single nanow..:

Zhang, H ; Guan, N ; Piazza, V...
Journal of Physics D: Applied Physics. 50 (2017) 48 - p. 484001 , 2017

Link: https://doi.org/10.1088/..

5

Size and temperature dependence of the electron–phonon scat..:

Bescond, M. ; Carrillo-Nuñez, H. ; Berrada, S...
Solid-State Electronics. 122 (2016) - p. 1-7 , 2016

Link: https://doi.org/10.1016/..

6

Comparison of junctionless and inversion-mode p-type metal-..:

Dib, E. ; Carrillo-Nuñez, H. ; Cavassilas, N..
Journal of Applied Physics. 119 (2016) 4 - p. , 2016

Link: https://doi.org/10.1063/..

7

List of contributors:

, In: Semiconductor Nanowires,

Arbiol, J. ; Bescond, M. ; Calarco, R.... - p. xi-xii , 2015

Link: https://doi.org/10.1016/..

8

Quantum transport in semiconductor nanowires:

, In: Semiconductor Nanowires,

Bescond, M. - p. 173-202 , 2015

Link: https://doi.org/10.1016/..

9

Influence of electron–phonon interactions in single dopant ..:

Carrillo-Nuñez, H. ; Bescond, M. ; Cavassilas, N...
Journal of Applied Physics. 116 (2014) 16 - p. , 2014

Link: https://doi.org/10.1063/..

10

Nanoscale device modeling using a conserving analytic conti..:

Mera, H. ; Lannoo, M. ; Cavassilas, N..
Physical Review B. 88 (2013) 7 - p. , 2013

Link: https://doi.org/10.1103/..

11

Inelastic scattering in nanoscale devices: One-shot current..:

Mera, H. ; Lannoo, M. ; Li, C...
Physical Review B. 86 (2012) 16 - p. , 2012

Link: https://doi.org/10.1103/..

12

Single donor induced negative differential resistance in si..:

Bescond, M. ; Lannoo, M. ; Raymond, L..
Journal of Applied Physics. 107 (2010) 9 - p. , 2010

Link: https://doi.org/10.1063/..

13

3D real-space quantum transport simulation of nanowire MOS ..:

Bescond, M. ; Lannoo, M. ; Michelini, F...
Microelectronics Journal. 40 (2009) 4-5 - p. 756-758 , 2009

Link: https://doi.org/10.1016/..

14

Original shaped nanowire metal-oxide-semiconductor field-ef..:

Pons, N. ; Cavassilas, N. ; Michelini, F...
Journal of Applied Physics. 106 (2009) 5 - p. , 2009

Link: https://doi.org/10.1063/..

15

GW investigation of interface-induced correlation effects o..:

Li, Changsheng ; Bescond, M. ; Lannoo, M.
Physical Review B. 80 (2009) 19 - p. , 2009

Link: https://doi.org/10.1103/..