E-LIB Suche - Ergebnisse für: Bhat, I.B.

1

Metalorganic chemical vapor deposition of hexagonal boron n..:

Ahmed, K. ; Dahal, R. ; Weltz, A....
Vacuum. 137 (2017) - p. 81-84 , 2017

Link: https://doi.org/10.1016/..

2

Solid-state neutron detectors based on thickness scalable h..:

Ahmed, K. ; Dahal, R. ; Weltz, A....
Applied Physics Letters. 110 (2017) 2 - p. , 2017

Link: https://doi.org/10.1063/..

3

Growth of hexagonal boron nitride on (111) Si for deep UV p..:

Ahmed, K. ; Dahal, R. ; Weltz, A....
Applied Physics Letters. 109 (2016) 11 - p. , 2016

Link: https://doi.org/10.1063/..

4

High-Quality (211)B CdTe on (211)Si Substrates Using Metalo..:

Rao, S. R. ; Shintri, S. S. ; Markunas, J. K...
Journal of Electronic Materials. 40 (2011) 8 - p. 1790-1794 , 2011

Link: https://doi.org/10.1007/..

5

n-Al0.15Ga0.85N/p-6H–SiC heterostructure and based bipolar ..:

Alivov, Ya.I. ; Fan, Q. ; Ni, X....
Microelectronics Reliability. 50 (2010) 12 - p. 2090-2092 , 2010

Link: https://doi.org/10.1016/..

6

Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial ..:

Rao, S. R. ; Shintri, S. S. ; Markunas, J. K...
Journal of Electronic Materials. 39 (2010) 7 - p. 996-1000 , 2010

Link: https://doi.org/10.1007/..

7

Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on..:

Rao, S.R. ; Shintri, S.S. ; Bhat, I.B.
Journal of Electronic Materials. 38 (2009) 8 - p. 1618-1623 , 2009

Link: https://doi.org/10.1007/..

8

A simple single-step diffusion and emitter etching process ..:

Rajagopalan, G. ; Reddy, N. S. ; Ehsani, H....
Journal of Electronic Materials. 32 (2003) 11 - p. 1317-1321 , 2003

Link: https://doi.org/10.1007/..

9

Optical constants of Bi2Te3 and Sb2Te3 measured using spect..:

Cui, Hao ; Bhat, I. B. ; Venkatasubramanian, R.
Journal of Electronic Materials. 28 (1999) 10 - p. 1111-1114 , 1999

Link: https://doi.org/10.1007/..

10

Ternary and quaternary antimonide devices for thermophotovo..:

Hitchcock, C.W ; Gutmann, R.J ; Ehsani, H...
Journal of Crystal Growth. 195 (1998) 1-4 - p. 363-372 , 1998

Link: https://doi.org/10.1016/..

11

Electrical characteristics of magnesium-doped gallium nitri..:

Fedison, J. B. ; Chow, T. P. ; Lu, H..
Applied Physics Letters. 72 (1998) 22 - p. 2841-2843 , 1998

Link: https://doi.org/10.1063/..

12

In situ monitoring of CdTe nucleation on GaAs (100) using s..:

Murthy, S.Dakshina ; Bhat, I.B.
Journal of Crystal Growth. 170 (1997) 1-4 - p. 193-197 , 1997

Link: https://doi.org/10.1016/..

13

Reactive Ion Etching of GaN in BCl3 / N 2 Plasmas:

Fedison, J. B. ; Chow, T. P. ; Lu, H..
Journal of The Electrochemical Society. 144 (1997) 8 - p. L221-L224 , 1997

Link: https://doi.org/10.1149/..

14

Pressure and Time‐Resolved Photoluminescence Studies of Mg‐..:

Teisseyre, H. ; Kozankiewicz, B. ; Leszczynski, M....
physica status solidi (b). 198 (1996) 1 - p. 235-241 , 1996

Link: https://doi.org/10.1002/..

15

Metalorganic vapor phase epitaxyin-situ growth of p-on-n an..:

Rao, V. ; Ehsani, H. ; Bhat, I. B....
Journal of Electronic Materials. 24 (1995) 5 - p. 437-443 , 1995

Link: https://doi.org/10.1007/..