E-LIB Suche - Ergebnisse für: Bisi, D.

1

1200V GaN Switches on Sapphire Substrate:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Gupta, G. ; Kanamura, M. ; Swenson, B.... - p. 349-352 , 2022

Link: https://doi.org/10.1109/..

2

Reliability and parasitic issues in GaN-based power HEMTs: ..:

Meneghesso, G ; Meneghini, M ; Rossetto, I...
Semiconductor Science and Technology. 31 (2016) 9 - p. 093004 , 2016

Link: https://doi.org/10.1088/..

3

G1T28, a CDK4/6 inhibitor, preserves T lymphocyte function ..:

Roberts, P. ; He, S. ; Schvartsman, G....
European Journal of Cancer. 69 (2016) - p. S143-S144 , 2016

Link: https://doi.org/10.1016/..

4

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-ox..:

Bisi, D. ; Chan, S. H. ; Liu, X....
Applied Physics Letters. 108 (2016) 11 - p. , 2016

Link: https://doi.org/10.1063/..

5

Impact of gate insulator on the dc and dynamic performance ..:

Rossetto, I. ; Meneghini, M. ; Bisi, D....
Microelectronics Reliability. 55 (2015) 9-10 - p. 1692-1696 , 2015

Link: https://doi.org/10.1016/..

6

Analysis of off-state leakage mechanisms in GaN-based MIS-H..:

Marino, F.A. ; Bisi, D. ; Meneghini, M....
Solid-State Electronics. 113 (2015) - p. 9-14 , 2015

Link: https://doi.org/10.1016/..

7

Effects of buffer compensation strategies on the electrical..:

Bisi, D. ; Stocco, A. ; Rossetto, I....
Microelectronics Reliability. 55 (2015) 9-10 - p. 1662-1666 , 2015

Link: https://doi.org/10.1016/..

8

Trapping in GaN-based metal-insulator-semiconductor transis..:

Meneghini, M. ; Bisi, D. ; Marcon, D....
Applied Physics Letters. 104 (2014) 14 - p. , 2014

Link: https://doi.org/10.1063/..

9

Proton induced trapping effect on space compatible GaN HEMT:

Stocco, A. ; Gerardin, S. ; Bisi, D....
Microelectronics Reliability. 54 (2014) 9-10 - p. 2213-2216 , 2014

Link: https://doi.org/10.1016/..

10

Letter: antibiotic dose adjustment in patients with advance..:

Leone, S. ; Rossi, M. ; Bisi, L...
Alimentary Pharmacology & Therapeutics. 38 (2013) 5 - p. 561-562 , 2013

Link: https://doi.org/10.1111/..

11

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias..:

Meneghesso, G. ; Meneghini, M. ; Stocco, A....
Microelectronic Engineering. 109 (2013) - p. 257-261 , 2013

Link: https://doi.org/10.1016/..

12

Absence of liver steatosis in HIV–HCV co-infected patients ..:

Borghi, V. ; Bisi, L. ; Manzini, L...
Infection. 41 (2012) 2 - p. 425-429 , 2012

Link: https://doi.org/10.1007/..

13

Field plate related reliability improvements in GaN-on-Si H..:

Chini, A. ; Soci, F. ; Fantini, F....
Microelectronics Reliability. 52 (2012) 9-10 - p. 2153-2158 , 2012

Link: https://doi.org/10.1016/..

14

Effect of a fixed-dose combination of emtricitabine, tenofo..:

Maggiolo, F ; Airoldi, M ; Trotta, MP...
Journal of the International AIDS Society. 11 (2008) Suppl 1 - p. P167 , 2008

Link: https://doi.org/10.1186/..

15

Absence of liver steatosis in HIV-infected patients receivi..:

Borghi, V ; Mussini, C ; Manzini, L..
Journal of the International AIDS Society. 11 (2008) Suppl 1 - p. P273 , 2008

Link: https://doi.org/10.1186/..