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Blanck, H.
269  Ergebnisse:
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1

Archäologischer Anzeiger 

Heft 3/1970  Archäologischer Anzeiger ; Heft 3/1970
Bohtz, C. H ; Metzler, D ; Hafner, G... - Reprint 2020 . , [2021]
Link: https://doi.org/10.1515/..
 
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2

0.5 μm GaN RF power bar technology space evaluation:

Van de Casteele, J. ; Stuhldreier, H. ; Bouw, D....
Microelectronics Reliability.  114 (2020)  - p. 113894 , 2020
Link: https://doi.org/10.1016/..
 
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3

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/..:

Rzin, M. ; Chini, A. ; De Santi, C....
Microelectronics Reliability.  88-90 (2018)  - p. 397-401 , 2018
Link: https://doi.org/10.1016/..
 
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4

High resolution physical analysis of ohmic contact formatio..:

Graff, A. ; Simon-Najasek, M. ; Altmann, F....
Microelectronics Reliability.  76-77 (2017)  - p. 338-343 , 2017
Link: https://doi.org/10.1016/..
 
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5

Total Sugar-Sweetened Beverage Intake Among US Adults Under..:

Lundeen, Elizabeth ; Park, S. ; Dooyema, C..
Journal of Nutrition Education and Behavior.  48 (2016)  7 - p. S5 , 2016
Link: https://doi.org/10.1016/..
 
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6

Correlation of gate leakage and local strain distribution i..:

Broas, M. ; Graff, A. ; Simon-Najasek, M....
Microelectronics Reliability.  64 (2016)  - p. 541-546 , 2016
Link: https://doi.org/10.1016/..
 
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7

Failure signatures on 0.25μm GaN HEMTs for high-power RF ap..:

Stocco, A. ; Dalcanale, S. ; Rampazzo, F....
Microelectronics Reliability.  54 (2014)  9-10 - p. 2237-2241 , 2014
Link: https://doi.org/10.1016/..
 
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8

Proton induced trapping effect on space compatible GaN HEMT:

Stocco, A. ; Gerardin, S. ; Bisi, D....
Microelectronics Reliability.  54 (2014)  9-10 - p. 2213-2216 , 2014
Link: https://doi.org/10.1016/..
 
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9

Qualification of 50V GaN on SiC technology for RF power amp..:

Wel, P.J. van der ; Roedle, T. ; Lambert, B...
Microelectronics Reliability.  53 (2013)  9-11 - p. 1439-1443 , 2013
Link: https://doi.org/10.1016/..
 
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10

Analysis of Schottky gate degradation evolution in AlGaN/Ga..:

Brunel, L. ; Lambert, B. ; Mezenge, P....
Microelectronics Reliability.  53 (2013)  9-11 - p. 1450-1455 , 2013
Link: https://doi.org/10.1016/..
 
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11

Improved thermal management for GaN power electronics: Silv..:

Faqir, M. ; Batten, T. ; Mrotzek, T....
Microelectronics Reliability.  52 (2012)  12 - p. 3022-3025 , 2012
Link: https://doi.org/10.1016/..
 
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12

Reliability data's of 0.5μm AlGaN/GaN on SiC technology qua..:

Lambert, B. ; Thorpe, J. ; Behtash, R....
Microelectronics Reliability.  52 (2012)  9-10 - p. 2200-2204 , 2012
Link: https://doi.org/10.1016/..
 
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13

Electrical properties, microstructure, and thermal stabilit..:

Malmros, A ; Blanck, H ; Rorsman, N
Semiconductor Science and Technology.  26 (2011)  7 - p. 075006 , 2011
Link: https://doi.org/10.1088/..
 
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14

Change of the material properties of Ni, Pt and Au thin fil..:

Schrade-Köhn, D ; Leber, P ; Behtash, R..
Semiconductor Science and Technology.  25 (2010)  9 - p. 095009 , 2010
Link: https://doi.org/10.1088/..
 
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15

Reliability of high voltage/high power L/S-band Hbt technol..:

Lambert, B. ; Jonsson, G. ; Bataille, J....
Microelectronics Reliability.  50 (2010)  9-11 - p. 1543-1547 , 2010
Link: https://doi.org/10.1016/..
 
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