E-LIB Suche - Ergebnisse für: Bogumilowicz, Y.

1

Nano-Heteroepitaxy: An Investigation of SiGe Pillars Coales..:

Mastari, M. ; Charles, M. ; Bogumilowicz, Y....
ECS Journal of Solid State Science and Technology. 8 (2019) 3 - p. P180-P185 , 2019

Link: https://doi.org/10.1149/..

2

Anti phase boundary free GaSb layer grown on 300 mm (001)-S..:

Cerba, T. ; Martin, M. ; Moeyaert, J....
Thin Solid Films. 645 (2018) - p. 5-9 , 2018

Link: https://doi.org/10.1016/..

3

Threading dislocations in GaAs epitaxial layers on various ..:

Bogumilowicz, Y. ; Hartmann, J.M. ; Rochat, N....
Journal of Crystal Growth. 453 (2016) - p. 180-187 , 2016

Link: https://doi.org/10.1016/..

4

Epitaxial growth of antiphase boundary free GaAs layer on 3..:

Alcotte, R. ; Martin, M. ; Moeyaert, J....
APL Materials. 4 (2016) 4 - p. 046101 , 2016

Link: https://doi.org/10.1063/..

5

Toward the III–V/Si co-integration by controlling the biato..:

Martin, M. ; Caliste, D. ; Cipro, R....
Applied Physics Letters. 109 (2016) 25 - p. , 2016

Link: https://doi.org/10.1063/..

6

Anti-phase boundaries–Free GaAs epilayers on "quasi-nominal..:

Bogumilowicz, Y. ; Hartmann, J. M. ; Cipro, R....
Applied Physics Letters. 107 (2015) 21 - p. , 2015

Link: https://doi.org/10.1063/..

7

Reduced-pressure chemical vapor deposition of boron-doped S..:

Bogumilowicz, Y. ; Hartmann, J.M.
Thin Solid Films. 557 (2014) - p. 4-9 , 2014

Link: https://doi.org/10.1016/..

8

Low defect InGaAs quantum well selectively grown by metal o..:

Cipro, R. ; Baron, T. ; Martin, M....
Applied Physics Letters. 104 (2014) 26 - p. , 2014

Link: https://doi.org/10.1063/..

9

Realization and characterization of thin single crystal Ge ..:

Bogumilowicz, Y ; Abbadie, A ; Klinger, V...
Semiconductor Science and Technology. 28 (2013) 3 - p. 035013 , 2013

Link: https://doi.org/10.1088/..

10

Direct Bonding of Silicon to Platinum:

Dargent, L. ; Bogumilowicz, Y. ; Renault, O....
Journal of The Electrochemical Society. 158 (2011) 3 - p. H255 , 2011

Link: https://doi.org/10.1149/..

11

Splitting kinetics of Si0.8Ge0.2 layers implanted with H or..:

Nguyen, Phuong ; Bourdelle, K. K. ; Aulnette, C....
Journal of Applied Physics. 104 (2008) 11 - p. , 2008

Link: https://doi.org/10.1063/..

12

Reduced Pressure–Chemical Vapour Deposition of Si/SiGe hete..:

Hartmann, J.M. ; Andrieu, F. ; Lafond, D....
Materials Science and Engineering: B. 154-155 (2008) - p. 76-84 , 2008

Link: https://doi.org/10.1016/..

13

Strain Measurements in SiGe Devices by Aberration-Corrected..:

, In: Springer Proceedings in Physics; Microscopy of Semiconducting Materials 2007,

Hüe, F ; Hÿtch, M J ; Hartmann, J-M.. - p. 149-152 , 2008

Link: https://doi.org/10.1007/..

14

Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the ..:

, In: 2007 IEEE Symposium on VLSI Technology,

Andrieu, F. ; Aussenac, F. ; Feruglio, S.... - p. None , 2007

Link: https://doi.org/10.1109/..

15

Performance and physics of sub-50nm strained Si on Si1−xGex..:

Andrieu, F. ; Ernst, T. ; Faynot, O....
Solid-State Electronics. 50 (2006) 4 - p. 566-572 , 2006

Link: https://doi.org/10.1016/..