Bolze, D.
1348  Ergebnisse:
Personensuche X
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2

Advanced activation trends for boron and arsenic by combina..:

Lerch, W. ; Paul, S. ; Niess, J....
Materials Science and Engineering: B.  154-155 (2008)  - p. 3-13 , 2008
 
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3

SiGe BiCMOS Technology with 3.0 ps Gate Delay:

, In: 2007 IEEE International Electron Devices Meeting,
Rucker, H. ; Fursenko, O. ; Grabolla, T.... - p. None , 2007
 
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4

Small-angle reciprocal space mapping of surface relief grat..:

Birkholz, M. ; Zaumseil, P. ; Bauer, J...
Materials Science and Engineering: C.  27 (2007)  5-8 - p. 1154-1157 , 2007
 
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6

Advanced activation of ultra-shallow junctions using flash-..:

Lerch, W. ; Paul, S. ; Niess, J....
Materials Science and Engineering: B.  124-125 (2005)  - p. 24-31 , 2005
 
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7

Effects of various Co/TiN and Co/Ti layer stacks and the sa..:

Buschbaum, S. ; Fursenko, O. ; Bolze, D....
Microelectronic Engineering.  76 (2004)  1-4 - p. 311-317 , 2004
 
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8

Time-resolved SAXS study of the effect of a double hydrophi..:

Bolze, J ; Pontoni, D ; Ballauff, M..
Journal of Colloid and Interface Science.  277 (2004)  1 - p. 84-94 , 2004
 
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14

Cost-effective high-performance high-voltage SiGe:C HBTs wi..:

, In: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224),
Heinemann, B. ; Kruger, D. ; Kurps, R.... - p. 15.6.1-15.6.4 , 2001
 
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15

The impact of supersaturated carbon on transient enhanced d..:

Rücker, H. ; Heinemann, B. ; Bolze, D....
Applied Physics Letters.  74 (1999)  22 - p. 3377-3379 , 1999
 
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