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Bordallo, Caio Cesar Mendes
7  Ergebnisse:
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1

Analysis of proton irradiated n- and p-type strained FinFET..:

Caparroz, Luis Felipe Vicentis ; Bordallo, Caio Cesar Mendes ; Martino, Joao Antonio...
Semiconductor Science and Technology.  33 (2018)  6 - p. 065003 , 2018
Link: https://doi.org/10.1088/..
 
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2

Influence of Doping and Tunneling Interface Stoichiometry o..:

El Kazzi, Salim ; Alireza, A ; Bordallo, Caio Cesar Mendes...
ECS Transactions.  72 (2016)  3 - p. 73-80 , 2016
Link: https://doi.org/10.1149/..
 
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3

Vertical Nanowire TFET Diameter Influence on Intrinsic Volt..:

Sivieri, Victor De Bodt ; Bordallo, Caio Cesar Mendes ; Agopian, Paula Ghedini Der...
ECS Transactions.  66 (2015)  5 - p. 187-192 , 2015
Link: https://doi.org/10.1149/..
 
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4

Temperature Influence on Strained nMuGFETs after Proton Rad..:

Bordallo, Caio Cesar Mendes ; Agopian, Paula Ghedini Der ; Martino, Joao Antonio..
ECS Transactions.  53 (2013)  5 - p. 171-176 , 2013
Link: https://doi.org/10.1149/..
 
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5

Stress engineering and proton radiation influence on off-st..:

Agopian, Paula Ghedini Der ; Bordallo, Caio Cesar Mendes ; Simoen, Eddy..
Solid-State Electronics.  90 (2013)  - p. 155-159 , 2013
Link: https://doi.org/10.1016/..
 
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6

Radiation Influence on Biaxial+Uniaxial Strained Silicon Mu..:

Bordallo, Caio Cesar Mendes ; Agopian, Paula Ghedini Der ; Martino, Joao Antonio..
ECS Transactions.  50 (2013)  5 - p. 205-212 , 2013
Link: https://doi.org/10.1149/..
 
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7

Analysis of proton irradiated n- and p-type strained FinFET..:

Caparroz, Luis Felipe Vicentis ; Bordallo, Caio Cesar Mendes ; Martino, Joao Antonio...
Semiconductor Science and Technology.  , 2018
Link: http://hdl.handle.net/11..
 
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