Bothe, Kyle M.
196  Ergebnisse:
Personensuche X
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1

Improved X-Band Performance and Reliability of a GaN HEMT W..:

Bothe, Kyle M. ; Ganguly, Satyaki ; Guo, Jia...
IEEE Electron Device Letters.  43 (2022)  3 - p. 354-357 , 2022
 
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2

Capacitance Engineering of GaN HEMT Technologies with Reces..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Bothe, Kyle M. ; King, Matthew R. ; Guo, Jia... - p. 90-93 , 2022
 
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3

A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compre..:

, In: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS),
 
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4

High-mobility solution-processed zinc oxide thin films on s..:

Benlamri, Mourad ; Bothe, Kyle M. ; Ma, Alex M....
physica status solidi (RRL) - Rapid Research Letters.  8 (2014)  10 - p. 871-875 , 2014
 
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5

Underlying design advantages for GaN MOSFETs compared with ..:

Bothe, Kyle M. ; Barlage, Douglas W.
Journal of Computational Electronics.  13 (2013)  1 - p. 217-223 , 2013
 
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7

Systems Analysis and Simulation 1988, I: Theory and Foundat.. 

Mathematical Research ; 46, Mathematische Forschung
Adams, R. H ; Aicardi, M ; Alder, J... - Reprint 2021 . , [2022]
 
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9

Polarization charge properties of low-temperature atomic la..:

Voon, K J ; Bothe, K M ; Motamedi, P..
Journal of Physics D: Applied Physics.  47 (2014)  34 - p. 345104 , 2014
 
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10

Writing as Mirror in the Work of Marguerite Porete:

Bothe, Catherine M.
Mystics Quarterly.  20 (1994)  3 - p. 105-112 , 1994
 
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12

Dynamische Simulation von industriellen Kreislaufprozessen ..:

Bothe, M. ; Fedorov, A. ; Frei, H...
Chemie Ingenieur Technik.  92 (2020)  9 - p. 1192-1192 , 2020
 
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