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Boudinov, Henri I.
55  Ergebnisse:
Personensuche X
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1

Defect-Free and Annealing Influences in P3HT Organic Field-..:

Leite, Gabriel V. ; Boudinov, Henri I.
IEEE Transactions on Device and Materials Reliability.  21 (2021)  1 - p. 111-116 , 2021
Link: https://doi.org/10.1109/..
 
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2

Instability of p–i–n perovskite solar cells under reverse b..:

Razera, Ricardo A. Z. ; Jacobs, Daniel A. ; Fu, Fan...
Journal of Materials Chemistry A.  8 (2020)  1 - p. 242-250 , 2020
Link: https://doi.org/10.1039/..
 
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3

Atomic composition, structure, and electrical properties of..:

Giulian, Raquel ; Bolzan, Charles A. ; Rossetto, Leandro T....
Thin Solid Films.  709 (2020)  - p. 138213 , 2020
Link: https://doi.org/10.1016/..
 
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4

Electrical Characterization of Al/PVA/Ni and Al/PVA/P3HT/Ni..:

, In: 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro),
Neves, Taiza A. ; Neves, Taiane C. ; Boudinov, Henri I. - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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5

Anomalous Current–Voltage Behavior in Al/TiO2/n‐Si Structur..:

Razera, Ricardo A. Z. ; Boudinov, Henri I. ; Rodrigues, Frâncio S. B...
physica status solidi (RRL) – Rapid Research Letters.  12 (2018)  6 - p. , 2018
Link: https://doi.org/10.1002/..
 
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6

Schottky barrier height of Ni/TiO2/4H-SiC metal-insulator-s..:

Kaufmann, Ivan R ; Pereira, Marcelo B ; Boudinov, Henri I
Semiconductor Science and Technology.  30 (2015)  12 - p. 125002 , 2015
Link: https://doi.org/10.1088/..
 
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7

Improvement in the SiO2/4H-SiC Interfacial Region by Therma..:

Pitthan, Eduardo ; Corrêa, Silma A. ; Palmieri, Rodrigo...
Materials Science Forum.  717-720 (2012)  - p. 753-756 , 2012
Link: https://doi.org/10.4028/..
 
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8

Quantum Hall Effect as an Electrical Resistance Standard:

Boudinov, Henri I. ; Boff, Marco
ECS Transactions.  39 (2011)  1 - p. 31-36 , 2011
Link: https://doi.org/10.1149/..
 
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9

Si Nanocrystals Embedded in SiO2 Produced by Reactive Sputt..:

De Mattos, Antônio Eudócio P. ; Sombrio, Guilherme ; Franzen, Paulo L...
ECS Transactions.  39 (2011)  1 - p. 103-108 , 2011
Link: https://doi.org/10.1149/..
 
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10

Effect of Reoxidations and Thermal Treatments with Hydrogen..:

Pitthan, Eduardo ; Corre^a, Silma A. ; Palmieri, Rodrigo...
Electrochemical and Solid-State Letters.  14 (2011)  9 - p. H368 , 2011
Link: https://doi.org/10.1149/..
 
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11

Sputtered Silicon Nitride Thin Films for Non-Volatile Memor..:

Adam, Matheus ; Coelho, Artur Vicente P. ; Pereira, Marcelo B..
ECS Transactions.  39 (2011)  1 - p. 371-377 , 2011
Link: https://doi.org/10.1149/..
 
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12

Structural Characterization of Si1-xCx Nanolayers Synthesiz..:

Dos Reis, Roberto M. ; Maltez, Rogerio L. ; Boudinov, Henri I.
ECS Transactions.  39 (2011)  1 - p. 95-101 , 2011
Link: https://doi.org/10.1149/..
 
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13

Photoluminescence in Non-Stoichiometric Silicon Nitride Fil..:

Sombrio, Guilherme ; De Mattos, Antônio Eudócio P. ; Franzen, Paulo L...
ECS Transactions.  39 (2011)  1 - p. 315-320 , 2011
Link: https://doi.org/10.1149/..
 
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14

Band-gap shift of the heavily doped single- and double-dono..:

Araújo, C. Moysés ; Almeida, J. Souza de ; Pepe, I...
Physical review. B, Condensed matter and materials physics. Melville. Vol. 62, no. 19 (Nov. 2000), p. 12882-12887.  , 2000
Link: http://hdl.handle.net/10..
 
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15

Band-gap shift of the heavily doped single- and double-dono..:

Araújo, C. Moysés ; Almeida, J. Souza de ; Pepe, I...
Physical review. B, Condensed matter and materials physics. Melville. Vol. 62, no. 19 (Nov. 2000), p. 12882-12887.  , 2000
Link: http://hdl.handle.net/10..
 
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