Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Boulard, F.
249  Ergebnisse:
Personensuche X
?
1

Integration of HfO2-based 3D OxRAM with GAA stacked-nanoshe..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Dubreuil, T. ; Barraud, S. ; Pedini, J.-M.... - p. 117-120 , 2023
Link: https://doi.org/10.1109/..
 
?
2

3D sequential integration with Si CMOS stacked on 28nm indu..:

, In: 2023 International Electron Devices Meeting (IEDM),
Mota-Frutuoso, T. ; Lapras, V. ; Brunet, L.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
3

Bevel contamination management in 3D integration by localiz..:

Boulard, F. ; Gros, V. ; Porzier, C....
Microelectronic Engineering.  265 (2022)  - p. 111875 , 2022
Link: https://doi.org/10.1016/..
 
?
4

A new FDSOI spin qubit platform with 40nm effective control..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Bedecarrats, T. ; Paz, B. Cardoso ; Diaz, B. Martinez... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
?
5

In-situ mapping of local orientation and strain in a fully ..:

Yildirim, C. ; Brellier, D. ; Pesci, R....
Acta Materialia.  220 (2021)  - p. 117290 , 2021
Link: https://doi.org/10.1016/..
 
?
6

MTF Characterization of Small Pixel Pitch IR Cooled Photodi..:

Yèche, A. ; Gravrand, O. ; Ferron, A....
Journal of Electronic Materials.  49 (2020)  11 - p. 6900-6907 , 2020
Link: https://doi.org/10.1007/..
 
?
7

Development of Electron Beam Induced Current Characterizati..:

Yèche, A. ; Boulard, F. ; Gravrand, O.
Journal of Electronic Materials.  48 (2019)  10 - p. 6045-6052 , 2019
Link: https://doi.org/10.1007/..
 
?
8

Development of Electron Beam Induced Current for diffusion ..:

Yèche, A. ; Boulard, F. ; Cervera, C....
Infrared Physics & Technology.  95 (2018)  - p. 170-176 , 2018
Link: https://doi.org/10.1016/..
 
?
9

Shockley–Read–Hall Lifetime Study and Implication in HgCdTe..:

Gravrand, O. ; Rothman, J. ; Delacourt, B....
Journal of Electronic Materials.  47 (2018)  10 - p. 5680-5690 , 2018
Link: https://doi.org/10.1007/..
 
?
10

Temperature and Injection Dependence of Photoluminescence D..:

Delacourt, B. ; Ballet, P. ; Boulard, F....
Journal of Electronic Materials.  46 (2017)  12 - p. 6817-6828 , 2017
Link: https://doi.org/10.1007/..
 
?
11

Gas mixture influence on the reactive ion etching of InSb i..:

Abautret, J ; Evirgen, A ; Perez, J P...
Semiconductor Science and Technology.  30 (2015)  6 - p. 065014 , 2015
Link: https://doi.org/10.1088/..
 
?
12

Phenotypic and genotypic changes in French populations of P..:

Mariette, N. ; Mabon, R. ; Corbière, R....
Plant Pathology.  65 (2015)  4 - p. 577-586 , 2015
Link: https://doi.org/10.1111/..
 
?
13

A New nBn IR Detection Concept Using HgCdTe Material:

Gravrand, O. ; Boulard, F. ; Ferron, A...
Journal of Electronic Materials.  44 (2015)  9 - p. 3069-3075 , 2015
Link: https://doi.org/10.1007/..
 
?
14

Quantum efficiency investigations of type-II InAs/GaSb midw..:

Giard, E. ; Ribet-Mohamed, I. ; Jaeck, J....
Journal of Applied Physics.  116 (2014)  4 - p. , 2014
Link: https://doi.org/10.1063/..
 
?
15

Addiction au sport et blessures au Centre national d'entraî..:

Tello, G. ; Jouvion, A. ; Boulard, J.-F....
Science & Sports.  27 (2012)  5 - p. 274-282 , 2012
Link: https://doi.org/10.1016/..
 
1-15