Brafman, O.
67  Ergebnisse:
Personensuche X
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1

Evidence for interface terraces in Ge/Si quantum wells obta..:

Brafman, O. ; Manor, R. ; Aroujo Silva, M.A...
Physica B: Condensed Matter.  219-220 (1996)  - p. 502-504 , 1996
 
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3

Strain buildup in InxGa1−xAs partially relaxed quantum well:

Buchinsky, O. ; Brafman, O. ; Brener, R...
Journal of Applied Physics.  76 (1994)  2 - p. 874-879 , 1994
 
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4

Photoexcitation of coupled plasmon-LO phonon modes in AlxGa..:

Manor, R ; Brafman, O ; Fekete, D.
Semiconductor Science and Technology.  9 (1994)  9 - p. 1659-1665 , 1994
 
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5

On the evolution of GaInAs/GaAs strained epitaxial layers:

Brafman, O. ; Fekete, D. ; Sarfaty, R.
Journal of Applied Physics.  71 (1992)  4 - p. 1744-1747 , 1992
 
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6

Compound formation and large microstrains at the interface ..:

Krost, A ; Richter, W ; Zahn, D R T.
Semiconductor Science and Technology.  6 (1991)  9A - p. A109-A114 , 1991
 
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7

Phonon study of strained InGaAs layers:

Brafman, O. ; Fekete, D. ; Sarfaty, R.
Applied Physics Letters.  58 (1991)  4 - p. 400-402 , 1991
 
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8

Zone-edge phonons-a microprobe of strain at the interface o..:

Brafman, O ; Krost, A ; Richter, W
Journal of Physics: Condensed Matter.  3 (1991)  32 - p. 6203-6207 , 1991
 
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