E-LIB Suche - Ergebnisse für: Brar, B.

1

InP HBT Technologies for sub-THz Communications:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Urteaga, M. ; Griffith, Z. ; Arias-Purdue, A.... - p. 122-123 , 2022

Link: https://doi.org/10.1109/..

2

The Histopathology of Oral Cancer Pain in a Mouse Model and..:

Naik, K. ; Janal, M.N. ; Chen, J....
Journal of Dental Research. 100 (2020) 2 - p. 194-200 , 2020

Link: https://doi.org/10.1177/..

3

P012: Why did you leave? Contacting left without being seen..:

Brar, B. ; Stempien, J. ; Goodridge, D.
CJEM. 20 (2018) S1 - p. S61-S61 , 2018

Link: https://doi.org/10.1017/..

4

AN UNEXPECTED ORAL FINDING: A CASE OF GRANULOCYTIC SARCOMA:

SHAH, S. ; BRAR, B. ; PHELAN, J..
Oral Surgery, Oral Medicine, Oral Pathology and Oral Radiology. 124 (2017) 3 - p. e224-e225 , 2017

Link: https://doi.org/10.1016/..

5

Caught in the Web: The Quality of Online Resources for Canc..:

Ingledew, P. ; El-Zammar, D.N. ; Scali, E....
International Journal of Radiation Oncology*Biology*Physics. 90 (2014) 1 - p. S604 , 2014

Link: https://doi.org/10.1016/..

6

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor ..:

Kim, D.-H. ; del Alamo, J. A. ; Antoniadis, D. A....
Applied Physics Letters. 101 (2012) 22 - p. , 2012

Link: https://doi.org/10.1063/..

7

A Comprehensive Evaluation of the Quality of Online Resourc..:

Ingledew, P. ; Brar, B. ; Lin, J...
International Journal of Radiation Oncology*Biology*Physics. 84 (2012) 3 - p. S251-S252 , 2012

Link: https://doi.org/10.1016/..

8

A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a t..:

, In: 2010 IEEE MTT-S International Microwave Symposium,

Griffith, Z. ; Ha, W. ; Chen, P... - p. 1-1 , 2010

Link: https://doi.org/10.1109/..

9

Monolithic integration of InP-based transistors on Si subst..:

Liu, W.K. ; Lubyshev, D. ; Fastenau, J.M....
Journal of Crystal Growth. 311 (2009) 7 - p. 1979-1983 , 2009

Link: https://doi.org/10.1016/..

10

Engineering Substrates for 3D Integration of III-V and CMOS:

Herrick, Katherine J. ; Kazior, T. E. ; LaRoche, J. R....
ECS Transactions. 16 (2008) 8 - p. 227-234 , 2008

Link: https://doi.org/10.1149/..

11

Monolithic III-V/Si Integration:

Fitzgerald, Eugene A. ; Bulsara, M. T. ; Bai, Y....
ECS Transactions. 16 (2008) 10 - p. 1015-1020 , 2008

Link: https://doi.org/10.1149/..

12

An ultra-low power InAs/AlSb HEMT W-band low-noise amplifie:

, In: IEEE MTT-S International Microwave Symposium Digest, 2005.,

Hacker, J.B. ; Bergman, J. ; Nagy, G.... - p. 1029,1030,1031,1032 , 2005

Link: https://doi.org/10.1109/..

13

Transistor and circuit design for 100-200-GHz ICs:

Griffith, Z. ; Yingda Dong ; Scott, D....
IEEE Journal of Solid-State Circuits. 40 (2005) 10 - p. 2061-2069 , 2005

Link: https://doi.org/10.1109/..

14

Design and characteristics of strained InAs/InAlAs composit..:

Lin, H.-K. ; Kadow, C. ; Bae, J.-U....
Journal of Applied Physics. 97 (2004) 2 - p. , 2004

Link: https://doi.org/10.1063/..

15

InAs/InAsP composite channels for antimonide-based field-ef..:

Lin, H.-K. ; Kadow, C. ; Dahlström, M....
Applied Physics Letters. 84 (2004) 3 - p. 437-439 , 2004

Link: https://doi.org/10.1063/..