E-LIB Suche - Ergebnisse für: Bravaix, Alain

1

Universal Dielectric Breakdown Modeling Under Off-State TDD..:

Garba-Seybou, Tidjani ; Bravaix, Alain ; Federspiel, Xavier...
IEEE Transactions on Device and Materials Reliability. 24 (2024) 2 - p. 174-183 , 2024

Link: https://doi.org/10.1109/..

2

Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon..:

Bravaix, Alain ; Pitard, Hugo ; Federspiel, Xavier.
Micromachines. 15 (2024) 2 - p. 205 , 2024

Link: https://doi.org/10.3390/..

3

Location of Oxide Breakdown Events under Off-state TDDB in ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Monsieur, Frederic... - p. 1-8 , 2023

Link: https://doi.org/10.1109/..

4

Current Driven Modeling and SILC Investigation of Oxide Bre..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Garba-Seybou, Tidjani ; Bravaix, Alain ; Federspiel, Xavier... - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

5

Hot-Carrier induced Breakdown events from Off to On mode in..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),

Bravaix, Alain ; Kussener, Edith ; Ney, David.. - p. 1-8 , 2020

Link: https://doi.org/10.1109/..

6

Hot-Carrier degradation in P- and N-channel EDMOS for smart..:

Li, Shuang ; Bravaix, Alain ; Kussener, Edith...
Microelectronics Reliability. 114 (2020) - p. 113811 , 2020

Link: https://doi.org/10.1016/..

7

Reliability aspects of gate oxide under ESD pulse stress:

Ille, Adrien ; Stadler, Wolfgang ; Pompl, Thomas...
Microelectronics Reliability. 49 (2009) 12 - p. 1407-1416 , 2009

Link: https://doi.org/10.1016/..

8

Ultrathin oxide reliability after combined constant voltage..:

Trapes, Céline ; Goguenheim, Didier ; Bravaix, Alain
Journal of Non-Crystalline Solids. 351 (2005) 21-23 - p. 1860-1865 , 2005

Link: https://doi.org/10.1016/..

9

Efficiency of interface trap generation under hole injectio..:

Bravaix, Alain ; Goguenheim, Didier ; Revil, Nathalie..
Journal of Non-Crystalline Solids. 322 (2003) 1-3 - p. 139-146 , 2003

Link: https://doi.org/10.1016/..

10

Impact of carrier injection in 2.2 nm-thick SiO2 oxides aft..:

Trapes, Céline ; Goguenheim, Didier ; Bravaix, Alain
Journal of Non-Crystalline Solids. 322 (2003) 1-3 - p. 199-205 , 2003

Link: https://doi.org/10.1016/..

11

Comparison of degradation modes in 1.2–2.1 nm thick SiO2 ox..:

Goguenheim, Didier ; Trapes, Céline ; Bravaix, Alain
Journal of Non-Crystalline Solids. 322 (2003) 1-3 - p. 183-190 , 2003

Link: https://doi.org/10.1016/..

12

Temperature and field dependence of stress induced leakage ..:

Goguenheim, Didier ; Bravaix, Alain ; Ananou, Bouchra...
Journal of Non-Crystalline Solids. 280 (2001) 1-3 - p. 78-85 , 2001

Link: https://doi.org/10.1016/..

13

Charging and discharging properties of electron traps creat..:

Vuillaume, Dominique ; Bravaix, Alain
Journal of Applied Physics. 73 (1993) 5 - p. 2559-2563 , 1993

Link: https://doi.org/10.1063/..

14

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431. , 2022

Link: https://hal.science/hal-..

15

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431. , 2022

Link: https://hal.science/hal-..