E-LIB Suche - Ergebnisse für: Bresse, J.F.

1

Epitaxial layer sheet resistance outside and under ohmic co..:

Bresse, J.F. ; Blayac, S.
Solid-State Electronics. 45 (2001) 7 - p. 1071-1076 , 2001

Link: https://doi.org/10.1016/..

2

A new analytical model for cathodoluminescence emission as ..:

Bresse, J.F.
Materials Science and Engineering: B. 42 (1996) 1-3 - p. 199-203 , 1996

Link: https://doi.org/10.1016/..

3

Application aspects of beam injection methods:

Bresse, J.-F.
Materials Science and Engineering: B. 24 (1994) 1-3 - p. 229-232 , 1994

Link: https://doi.org/10.1016/..

4

Chemical composition by Auger sputter-depth profiles of GaA..:

Bresse, J.F.
Applied Surface Science. 65-66 (1993) - p. 825-830 , 1993

Link: https://doi.org/10.1016/..

5

Electron acoustic signal of metallic layers over a semicond..:

Bresse, J. F.
Journal of Applied Physics. 71 (1992) 10 - p. 4678-4683 , 1992

Link: https://doi.org/10.1063/..

6

Thermally stable low resistance ohmic contacts to n-type ga..:

Hugon, M. C. ; Agius, B. ; Varniere, F....
Applied Physics Letters. 58 (1991) 24 - p. 2773-2775 , 1991

Link: https://doi.org/10.1063/..

7

RIE of a T‐Shape Refractory Ohmic Contact for Self‐Aligned ..:

Collumeau, J. M. ; Etrillard, J. ; Bresse, J. F..
Journal of The Electrochemical Society. 137 (1990) 2 - p. 671-675 , 1990

Link: https://doi.org/10.1149/..

8

GeMoW Refractory Ohmic Contact for GaAs / GaAlAs Self‐Align..:

Dubon‐Chevallier, C. ; Blanconnier, P. ; Besombes, C....
Journal of The Electrochemical Society. 137 (1990) 5 - p. 1514-1519 , 1990

Link: https://doi.org/10.1149/..

9

Cathodoluminescence mapping, deep-level transient spectrosc..:

Papadopoulo, A. C. ; Bresse, J. F. ; Legros, R....
Journal of Applied Physics. 66 (1989) 8 - p. 3831-3838 , 1989

Link: https://doi.org/10.1063/..

10

Transient generation by a wide thermoelastic source at a so..:

Bresse, L. F. ; Hutchins, D. A.
Journal of Applied Physics. 65 (1989) 4 - p. 1441-1446 , 1989

Link: https://doi.org/10.1063/..

11

Use of scanning electron acoustic microscopy for the analys..:

Bresse, J.F.
Materials Science and Engineering: A. 122 (1989) 1 - p. 53-56 , 1989

Link: https://doi.org/10.1016/..

12

Characterization of AlGaAs/GaAs heterojunction bipolar tran..:

Dubon-Chevallier, C. ; Papadopoulo, A. C. ; Bresse, J. F..
Journal of Applied Physics. 66 (1989) 6 - p. 2603-2607 , 1989

Link: https://doi.org/10.1063/..

13

Evolution of the electron acoustic signal as function of do..:

Bresse, J. F. ; Papadopoulo, A. C.
Journal of Applied Physics. 64 (1988) 1 - p. 98-102 , 1988

Link: https://doi.org/10.1063/..

14

Characterization of oval defects in molecular beam epitaxy ..:

Papadopoulo, A. C. ; Alexandre, F. ; Bresse, J. F.
Applied Physics Letters. 52 (1988) 3 - p. 224-226 , 1988

Link: https://doi.org/10.1063/..

15

Study of silicon-doped AlxGayIn1−x−yAs quaternary layers by..:

Papadopoulo, A. C. ; Bresse, J. F. ; Praseuth, J. P.
Journal of Applied Physics. 62 (1987) 10 - p. 4174-4177 , 1987

Link: https://doi.org/10.1063/..