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Brill, G.
1031  Ergebnisse:
Personensuche X
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1

Far-infrared optical properties of Hg1−Cd Se thin films:

Lyons, J.W. ; Brill, G. ; Peiris, F.C.
Solid State Communications.  303-304 (2019)  - p. 113729 , 2019
Link: https://doi.org/10.1016/..
 
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2

Investigating the Electron–Phonon Coupling of Molecular Bea..:

Peiris, F. C. ; Lewis, M. V. ; Brill, G...
Journal of Electronic Materials.  47 (2018)  10 - p. 5715-5718 , 2018
Link: https://doi.org/10.1007/..
 
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3

Dielectric functions and carrier concentrations of Hg1−xCdx..:

Lee, A. J. ; Peiris, F. C. ; Brill, G...
Applied Physics Letters.  107 (2015)  7 - p. , 2015
Link: https://doi.org/10.1063/..
 
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4

Impact of Tellurium Precipitates in CdZnTe Substrates on MB..:

Benson, J. D. ; Bubulac, L. O. ; Smith, P. J....
Journal of Electronic Materials.  43 (2014)  11 - p. 3993-3998 , 2014
Link: https://doi.org/10.1007/..
 
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5

Exploring the Optical Properties of Hg1−x Cd x Se Films Usi..:

Peiris, F.C. ; Brill, G. ; Doyle, Kevin..
Journal of Electronic Materials.  43 (2014)  8 - p. 3056-3059 , 2014
Link: https://doi.org/10.1007/..
 
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6

Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(21..:

Jacobs, R. N. ; Stoltz, A. J. ; Benson, J. D....
Journal of Electronic Materials.  42 (2013)  11 - p. 3148-3155 , 2013
Link: https://doi.org/10.1007/..
 
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7

Comparison of the Schaake and Benson Etches to Delineate Di..:

Farrell, S. ; Rao, Mulpuri V. ; Brill, G....
Journal of Electronic Materials.  42 (2013)  11 - p. 3097-3102 , 2013
Link: https://doi.org/10.1007/..
 
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8

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrat..:

Benson, J. D. ; Bubulac, L. O. ; Lennon, C. M....
Journal of Electronic Materials.  42 (2013)  11 - p. 3217-3223 , 2013
Link: https://doi.org/10.1007/..
 
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9

Analysis of thermal cycle-induced dislocation reduction in ..:

Jacobs, R.N. ; Benson, J.D. ; Stoltz, A.J....
Journal of Crystal Growth.  366 (2013)  - p. 88-94 , 2013
Link: https://doi.org/10.1016/..
 
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10

Microstructural Characterization of HgCdSe Grown by Molecul..:

Zhao, W. F. ; Brill, G. ; Chen, Y..
Journal of Electronic Materials.  41 (2012)  10 - p. 2852-2856 , 2012
Link: https://doi.org/10.1007/..
 
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11

Reduction of Dislocation Density by Producing Novel Structu..:

Stoltz, A. J. ; Benson, J. D. ; Jacobs, R....
Journal of Electronic Materials.  41 (2012)  10 - p. 2949-2956 , 2012
Link: https://doi.org/10.1007/..
 
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12

Growth and Analysis of HgCdTe on Alternate Substrates:

Benson, J.D. ; Bubulac, L.O. ; Smith, P.J....
Journal of Electronic Materials.  41 (2012)  10 - p. 2971-2974 , 2012
Link: https://doi.org/10.1007/..
 
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13

Study of HgCdSe Material Grown by Molecular Beam Epitaxy:

Brill, G. ; Chen, Y. ; Wijewarnasuriya, P.
Journal of Electronic Materials.  40 (2011)  8 - p. 1679-1684 , 2011
Link: https://doi.org/10.1007/..
 
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14

Dislocation Analysis in (112)B HgCdTe/CdTe/Si:

Benson, J. D. ; Farrell, S. ; Brill, G....
Journal of Electronic Materials.  40 (2011)  8 - p. 1847-1853 , 2011
Link: https://doi.org/10.1007/..
 
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15

Effect of Cycle Annealing Parameters on Dislocation Density..:

Farrell, S. ; Rao, Mulpuri V. ; Brill, G....
Journal of Electronic Materials.  40 (2011)  8 - p. 1727-1732 , 2011
Link: https://doi.org/10.1007/..
 
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