E-LIB Suche - Ergebnisse für: Brosselard, Pierre

1

Breakdown voltage capability of vertical 4H–SiC power devic..:

Godignon, Philippe ; Biscarrat, Jérôme ; Tranchesset, Miya...
Materials Science in Semiconductor Processing. 178 (2024) - p. 108347 , 2024

Link: https://doi.org/10.1016/..

2

4H-SiC PiN Diode Protected by Narrow Field Rings Investigat..:

Planson, Dominique ; Sonneville, Camille ; Bevilacqua, Pascal...
Materials Science Forum. 1062 (2022) - p. 341-345 , 2022

Link: https://doi.org/10.4028/..

3

Surge Driven Evolution of Schottky Barrier Height on 4H-SiC..:

Asllani, Besar ; Fonder, Jean Baptiste ; Bevilacqua, Pascal...
Materials Science Forum. 924 (2018) - p. 593-596 , 2018

Link: https://doi.org/10.4028/..

4

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in..:

Asllani, Besar ; Berthou, Maxime ; Tournier, Dominique..
Materials Science Forum. 858 (2016) - p. 741-744 , 2016

Link: https://doi.org/10.4028/..

5

An Ultrafast I-V Measurement Technique Accounting for Capac..:

Fonder, Jean Baptiste ; Brosselard, Pierre ; Tournier, Dominique..
Materials Science Forum. 858 (2016) - p. 422-425 , 2016

Link: https://doi.org/10.4028/..

6

Experimental Investigation of the Seeding Stage during SiC ..:

Shin, Yun Ji ; Ariyawong, Kanaparin ; Doisneau, Beatrice...
Materials Science Forum. 858 (2016) - p. 81-84 , 2016

Link: https://doi.org/10.4028/..

7

4H-SiC VJFETs with Self-Aligned Contacts:

Zekentes, Konstantinos ; Stavrinidis, Antonis ; Konstantinidis, George...
Materials Science Forum. 821-823 (2015) - p. 793-796 , 2015

Link: https://doi.org/10.4028/..

8

Cryogenic to High Temperature Exploration of 4H-SiC W-SBD:

Berthou, Maxime ; Asllani, Besar ; Brosselard, Pierre.
Materials Science Forum. 821-823 (2015) - p. 583-587 , 2015

Link: https://doi.org/10.4028/..

9

Investigation of Using SiC MOSFET for High Temperature Appl..:

Ouaida, Rémy ; Berthou, Maxime ; Brosselard, Pierre...
EPE Journal. 25 (2015) 2 - p. 5-11 , 2015

Link: https://doi.org/10.1080/..

10

Improvement of the Specific Contact Resistance on P-Type 4H..:

Thierry-Jebali, Nicolas ; Vo-Ha, Arthur ; Carole, Davy...
Materials Science Forum. 806 (2014) - p. 57-60 , 2014

Link: https://doi.org/10.4028/..

11

Applications of Vapor-Liquid-Solid Selective Epitaxy of Hig..:

Thierry-Jebali, Nicolas ; Lazar, Mihai ; Vo-Ha, Arthur...
Materials Science Forum. 778-780 (2014) - p. 639-644 , 2014

Link: https://doi.org/10.4028/..

12

Impact of Design on Electrical Characteristics of 3.5 kV 4H..:

Brosselard, Pierre ; Chevalier, Florian ; Proux, Benjamin...
Materials Science Forum. 806 (2014) - p. 117-120 , 2014

Link: https://doi.org/10.4028/..

13

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-..:

Florentin, Matthieu ; Montserrat, Josep ; Brosselard, Pierre..
Materials Science Forum. 778-780 (2014) - p. 591-594 , 2014

Link: https://doi.org/10.4028/..

14

Electrical Characterization of PiN Diodes with p+ Layer Sel..:

Thierry-Jebali, Nicolas ; Lazar, Mihai ; Vo-Ha, Arthur...
Materials Science Forum. 740-742 (2013) - p. 911-914 , 2013

Link: https://doi.org/10.4028/..

15

Edge Termination Design Improvements for 10 kV 4H-SiC Bipol..:

Nguyen, Duy Minh ; Huang, Runhua ; Phung, Luong Viêt...
Materials Science Forum. 740-742 (2013) - p. 609-612 , 2013

Link: https://doi.org/10.4028/..