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X
Brunner, Frank
763  Ergebnisse:
Personensuche X
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1

Investigation of atomic layer deposition methods of Al2O3 o..:

Tadmor, Liad ; Vandenbroucke, Sofie S. T. ; Bahat Treidel, Eldad...
Journal of Applied Physics.  135 (2024)  8 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Spatial correlation of defect-selective etching and dark lu..:

Netzel, Carsten ; Hagedorn, Sylvia ; Schön, Matthias...
Semiconductor Science and Technology.  39 (2024)  7 - p. 075014 , 2024
Link: https://doi.org/10.1088/..
 
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3

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV ..:

Brunner, Frank ; Brusaterra, Enrico ; Bahat‐Treidel, Eldad..
physica status solidi (RRL) – Rapid Research Letters.  , 2024
Link: https://doi.org/10.1002/..
 
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4

Correlating Interface and Border Traps With Distinctive Fea..:

Zagni, Nicolò ; Fregolent, Manuel ; Verzellesi, Giovanni...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1561-1566 , 2024
Link: https://doi.org/10.1109/..
 
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5

10 A/950 V switching of GaN-channel HFETs with non-doped Al..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hilt, Oliver ; Brunner, Frank ; Wolf, Mihaela... - p. 374-377 , 2023
Link: https://doi.org/10.1109/..
 
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6

Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon M..:

, In: 2023 14th Spanish Conference on Electron Devices (CDE),
Ortiga-Fibla, Jesus ; Brunner, Frank ; Treidel, Eldad Bahat... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a).  220 (2023)  16 - p. , 2023
Link: https://doi.org/10.1002/..
 
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8

Thermal management of vertical GaN transistors:

, In: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),
Mitterhuber, Lisa ; Leitgeb, Verena ; Krainz, Markus... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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9

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transi..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Brunner, Frank..
physica status solidi (a).  219 (2022)  8 - p. , 2022
Link: https://doi.org/10.1002/..
 
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10

Effects of post metallization annealing on Al2O3 atomic lay..:

Tadmor, Liad ; Brusaterra, Enrico ; Treidel, Eldad Bahat...
Semiconductor Science and Technology.  38 (2022)  1 - p. 015006 , 2022
Link: https://doi.org/10.1088/..
 
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11

GaN-channel HEMTs with AlN buffer for high-voltage switchin:

, In: 2021 Device Research Conference (DRC),
Hilt, Oliver ; Brunner, Frank ; Treidel, Eldad Bahat.. - p. 1-2 , 2021
Link: https://doi.org/10.1109/..
 
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12

On the Conduction Properties of Vertical GaN n-Channel Tren..:

Treidel, Eldad Bahat ; Hilt, Oliver ; Hoffmann, Veit...
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 215-228 , 2021
Link: https://doi.org/10.1109/..
 
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13

Temperature Dependence of Dark Spot Diameters in GaN and Al..:

Netzel, Carsten ; Knauer, Arne ; Brunner, Frank..
physica status solidi (b).  258 (2021)  11 - p. , 2021
Link: https://doi.org/10.1002/..
 
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14

GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammon..:

Treidel, Eldad Bahat ; Hilt, Oliver ; Stöver, Julian...
physica status solidi (a).  215 (2018)  8 - p. , 2018
Link: https://doi.org/10.1002/..
 
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15

Selective area isolation of β-Ga2O3 using multiple energy n..:

Tetzner, Kornelius ; Thies, Andreas ; Bahat Treidel, Eldad...
Applied Physics Letters.  113 (2018)  17 - p. , 2018
Link: https://doi.org/10.1063/..
 
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