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X
Bufler, F. M.
~ 100  Ergebnisse:
Personensuche X
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1

Thermal Performance Evaluation of Multi-Core SOCs Using Pow..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Mishra, S. ; Vermeersch, B. ; Sankatali, V.... - p. 1-6 , 2024
Link: https://doi.org/10.1109/..
 
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2

Temperature Dependence of Quasi–Ballistic Transport in n–Ty..:

, In: 2024 IEEE Latin American Electron Devices Conference (LAEDC),
Bufler, F. M. ; Vermeersch, B. ; Mishra, S.... - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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3

PPAC of sheet-based CFET configurations for 4 track design ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Schuddinck, P. ; Bufler, F. M. ; Xiang, Y.... - p. 365-366 , 2022
Link: https://doi.org/10.1109/..
 
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4

Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Perfor..:

Bufler, F. M. ; Arimura, H. ; Favia, P....
IEEE Transactions on Electron Devices.  69 (2022)  11 - p. 6384-6387 , 2022
Link: https://doi.org/10.1109/..
 
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5

Comparison of Electrical Performance of Co-Integrated Forks..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Ritzenthaler, R. ; Mertens, H. ; Eneman, G.... - p. 26.2.1-26.2.4 , 2021
Link: https://doi.org/10.1109/..
 
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6

TCAD-Assisted MultiPhysics Modeling & Simulation for Accele..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Mohiyaddin, F. A. ; Simion, G. ; Stuyck, N. I. Dumoulin... - p. 253-256 , 2020
Link: https://doi.org/10.23919..
 
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7

Multiphysics Simulation & Design of Silicon Quantum Dot Qub..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Mohiyaddin, F. A. ; Chan, BT ; Ivanov, Ts.... - p. 39.5.1-39.5.4 , 2019
Link: https://doi.org/10.1109/..
 
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8

3D Monte Carlo simulation of FinFET and FDSOI devices with ..:

Bufler, F. M. ; Smith, L.
Journal of Computational Electronics.  12 (2013)  4 - p. 651-657 , 2013
Link: https://doi.org/10.1007/..
 
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9

Threshold energy and impact ionization scattering rate calc..:

May, C. ; Bufler, F. M.
Journal of Computational Electronics.  6 (2007)  1-3 - p. 23-26 , 2007
Link: https://doi.org/10.1007/..
 
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10

On a simple and accurate quantum correction for Monte Carlo..:

Bufler, F. M. ; Hudé, R. ; Erlebach, A.
Journal of Computational Electronics.  5 (2006)  4 - p. 467-469 , 2006
Link: https://doi.org/10.1007/..
 
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11

Strained-Si single-gate versus unstrained-Si double-gate MO..:

Bufler, F M ; Schenk, A ; Fichtner, W
Semiconductor Science and Technology.  19 (2004)  4 - p. S122-S124 , 2004
Link: https://doi.org/10.1088/..
 
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12

Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of..:

Bufler, F.M. ; Schenk, A. ; Fichtner, W.
Journal of Computational Electronics.  2 (2003)  2-4 - p. 81-84 , 2003
Link: https://doi.org/10.1023/..
 
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13

Proof of a simple time-step propagation scheme for Monte Ca..:

Bufler, F.M. ; Schenk, A. ; Fichtner, W.
Mathematics and Computers in Simulation.  62 (2003)  3-6 - p. 323-326 , 2003
Link: https://doi.org/10.1016/..
 
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14

Hole and electron transport in strained Si: Orthorhombic ve..:

Bufler, F. M. ; Fichtner, W.
Applied Physics Letters.  81 (2002)  1 - p. 82-84 , 2002
Link: https://doi.org/10.1063/..
 
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15

Strain-Dependence of Electron Transport in BulkSi and Deep-..:

Bufler, F. M. ; Yoder, P. D. ; Fichtner, W.
VLSI Design.  13 (2001)  1-4 - p. 163-167 , 2001
Link: https://doi.org/10.1155/..
 
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