Bugge, F.
2320  Ergebnisse:
Personensuche X
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1

Physica status solidi 

Volume 111, Number 2: February 16  Physica status solidi ; Volume 111, Number 2, A
Abrosimova, G. E ; Ahmed, A. M ; Ahmed, M. A... - Reprint 2021 . , [2022]
 
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2

Lifetime behavior of laser diodes with highly strained InGa..:

Bugge, F. ; Bege, R. ; Blume, G....
Journal of Crystal Growth.  491 (2018)  - p. 31-35 , 2018
 
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4

Vancomycin levels are frequently subtherapeutic in critical..:

Bakke, V. ; Sporsem, H. ; Von der Lippe, E....
Acta Anaesthesiologica Scandinavica.  61 (2017)  6 - p. 627-635 , 2017
 
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5

Chemical Vapor Epitaxy of AlxGa1-xAs:

, In: Reference Module in Materials Science and Materials Engineering,
 
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6

MOVPE growth of laser structures for high-power application..:

Bugge, F. ; Crump, P. ; Frevert, C....
Journal of Crystal Growth.  452 (2016)  - p. 258-262 , 2016
 
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7

Growth of laser diode structures with emission wavelength b..:

Bugge, F. ; Paschke, K. ; Blume, G....
Journal of Crystal Growth.  414 (2015)  - p. 205-209 , 2015
 
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8

Combined Mg/Zn p-type doping for AlGaInP laser diodes:

Pohl, J. ; Bugge, F. ; Blume, G....
Journal of Crystal Growth.  414 (2015)  - p. 215-218 , 2015
 
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9

The impact of low Al-content waveguides on power and effici..:

Frevert, C ; Crump, P ; Bugge, F..
Semiconductor Science and Technology.  31 (2015)  2 - p. 025003 , 2015
 
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12

Distributed feedback lasers in the 760 to 810 nm range and ..:

Brox, O ; Bugge, F ; Mogilatenko, A...
Semiconductor Science and Technology.  29 (2014)  9 - p. 095018 , 2014
 
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Integrated 13 GHz ps-pulse-source at 1064 nm:

Brox, O ; Prziwarka, T ; Klehr, A...
Semiconductor Science and Technology.  28 (2013)  4 - p. 045015 , 2013
 
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14

In-situ etching of patterned GaAs/InGaP surfaces for highly..:

Maaßdorf, A. ; Schultz, C.M. ; Brox, O....
Journal of Crystal Growth.  370 (2013)  - p. 226-229 , 2013
 
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