E-LIB Suche - Ergebnisse für: Burghardt, H

1

Organische Leiter, Halbleiter und Photoleiter

Wissenschaftliche Taschenbücher ; 252

Hamann, C. ; Burghardt, H. ; Heim, J. - Reprint 2022 . , 2023

Link: https://doi.org/10.1515/..

2

Organische Leiter, Halbleiter und Photoleiter

Wissenschaftliche Taschenbücher ; 252

Hamann, C ; Burghardt, H ; Heim, J - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

3

Physica status solidi

Volume 133, Number 2: February 1 Physica status solidi ; Volume 133, Number 2, B

Anderson, A ; Annenkov, Yu. M ; Antón, M... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

4

Interface and border trap relaxation in Si–SiO2 structures ..:

Beyer, R. ; von Borany, J. ; Burghardt, H.
Microelectronic Engineering. 86 (2009) 7-9 - p. 1859-1862 , 2009

Link: https://doi.org/10.1016/..

5

Quantum-mechanical study of the direct tunneling current in..:

Nakhmedov, E. P. ; Wieczorek, K. ; Burghardt, H..
Journal of Applied Physics. 98 (2005) 2 - p. , 2005

Link: https://doi.org/10.1063/..

6

Maßgeschneiderte Domänenstrukturen in dotiertem Zinkoxid:

Pesch, E. ; Burghardt, H. ; Mader, W.
Zeitschrift für anorganische und allgemeine Chemie. 630 (2004) 11 - p. 1751-1751 , 2004

Link: https://doi.org/10.1002/..

7

A deconvolution of the transient response of (100) Si/SiO2 ..:

Beyer, R. ; Burghardt, H. ; Thurzo, I...
Solid-State Electronics. 44 (2000) 8 - p. 1463-1470 , 2000

Link: https://doi.org/10.1016/..

8

A study of the interface states in MIS-structures with thin..:

Beyer, R. ; Burghardt, H. ; Thomas, E....
Microelectronics Reliability. 39 (1999) 2 - p. 297-302 , 1999

Link: https://doi.org/10.1016/..

9

A study of deep centers in Zn1−xMgxSe crystals using deep-l..:

Beyer, R. ; Burghardt, H. ; Firszt, F..
Journal of Applied Physics. 84 (1998) 9 - p. 5345-5347 , 1998

Link: https://doi.org/10.1063/..

10

Structural properties and electrical behaviour of thin sili..:

Beyer, R ; Burghardt, H ; Reich, R...
Microelectronics Reliability. 38 (1998) 2 - p. 243-247 , 1998

Link: https://doi.org/10.1016/..

11

Electrical transport and trap properties in nitrogen-doped ..:

Prösch, G. ; Beyer, R. ; Behringer, M....
Journal of Crystal Growth. 184-185 (1998) - p. 440-444 , 1998

Link: https://doi.org/10.1016/..

12

Defects in MOVPE grown ZnSe on GaAs studied by deep level t..:

Prösch, G. ; Hellig, K. ; Beyer, R....
Journal of Crystal Growth. 170 (1997) 1-4 - p. 537-541 , 1997

Link: https://doi.org/10.1016/..

13

Hole trap generation by thermal treatment of nitrogen doped..:

Hellig, K. ; Prösch, G. ; Behringer, M....
Applied Physics Letters. 71 (1997) 15 - p. 2187-2189 , 1997

Link: https://doi.org/10.1063/..

14

An experimental study of SiOxNy/Si interfaces prepared by r..:

Thurzo, I. ; Gmucová, K. ; Csabay, O....
Physica Status Solidi (a). 151 (1995) 2 - p. 345-353 , 1995

Link: https://doi.org/10.1002/..

15

A Study of the Compositional Structure and Electrical Behav..:

Beyer, R. ; Burghardt, H. ; Prösch, G....
Physica Status Solidi (a). 145 (1994) 2 - p. 447-452 , 1994

Link: https://doi.org/10.1002/..