Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Burk, Albert A.
82  Ergebnisse:
Personensuche X
?
1

15 kV n-GTOs in 4H-SiC:

Ryu, Sei Hyung ; Lichtenwalner, Daniel J. ; O'Loughlin, Michael...
Materials Science Forum.  963 (2019)  - p. 651-654 , 2019
Link: https://doi.org/10.4028/..
 
?
2

Industrial and Body Diode Qualification of Gen-III Medium V..:

Van Brunt, Edward ; O'Loughlin, Michael ; Burk, Albert A....
Materials Science Forum.  963 (2019)  - p. 805-810 , 2019
Link: https://doi.org/10.4028/..
 
?
3

Performance and Reliability Impacts of Extended Epitaxial D..:

Van Brunt, Edward ; Burk, Albert ; Lichtenwalner, Daniel J....
Materials Science Forum.  924 (2018)  - p. 137-142 , 2018
Link: https://doi.org/10.4028/..
 
?
4

Blocking Performance Improvements for 4H-SiC P-GTO Thyristo..:

Ryu, Sei Hyung ; Lichtenwalner, Daniel J. ; O'Loughlin, Michael...
Materials Science Forum.  924 (2018)  - p. 633-636 , 2018
Link: https://doi.org/10.4028/..
 
?
5

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Lar..:

Leonard, R.T. ; Paisley, M.J. ; Bubel, S....
Materials Science Forum.  897 (2017)  - p. 226-229 , 2017
Link: https://doi.org/10.4028/..
 
?
6

Impact of Carrier Lifetime Enhancement Using High Temperatu..:

Ryu, Sei Hyung ; Lichtenwalner, Daniel J. ; Van Brunt, Edward...
Materials Science Forum.  897 (2017)  - p. 587-590 , 2017
Link: https://doi.org/10.4028/..
 
?
7

Bulk Growth of Large Area SiC Crystals:

Powell, Adrian R. ; Sumakeris, Joseph J. ; Khlebnikov, Yuri...
Materials Science Forum.  858 (2016)  - p. 5-10 , 2016
Link: https://doi.org/10.4028/..
 
?
8

Performance and Reliability of SiC Power MOSFETs:

Lichtenwalner, Daniel J. ; Hull, Brett ; Pala, Vipindas...
MRS Advances.  1 (2016)  2 - p. 81-89 , 2016
Link: https://doi.org/10.1557/..
 
?
9

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Ep..:

O'Loughlin, Michael ; Burk, Albert ; Tsvetkov, Denis..
Materials Science Forum.  858 (2016)  - p. 167-172 , 2016
Link: https://doi.org/10.4028/..
 
?
10

Ultra-Fast SiC Wafer Surface Roughness Mapping:

Nakano, Yoshihiro ; Asakawa, Yuji ; Seki, Hirokazu..
Materials Science Forum.  858 (2016)  - p. 489-492 , 2016
Link: https://doi.org/10.4028/..
 
?
11

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV:

Allen, Scott ; Pala, Vipindas ; VanBrunt, E....
Materials Science Forum.  821-823 (2015)  - p. 701-704 , 2015
Link: https://doi.org/10.4028/..
 
?
12

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Impla..:

Stahlbush, Robert E. ; Mahadik, Nadeemullah A. ; Zhang, Q. Jon...
Materials Science Forum.  821-823 (2015)  - p. 387-390 , 2015
Link: https://doi.org/10.4028/..
 
?
13

Latest SiC Epitaxial Layer Growth Results in a High-Through..:

Burk, Albert A. ; Tsvetkov, D. ; O'Loughlin, MichaelJ....
Materials Science Forum.  778-780 (2014)  - p. 113-116 , 2014
Link: https://doi.org/10.4028/..
 
?
14

20 kV 4H-SiC N-IGBTs:

Ryu, Sei Hyung ; Capell, Craig ; Jonas, Charlotte...
Materials Science Forum.  778-780 (2014)  - p. 1030-1033 , 2014
Link: https://doi.org/10.4028/..
 
?
15

Strategic Overview of High-Voltage SiC Power Device Develop..:

Cheng, Lin ; Palmour, John W. ; Agarwal, Anant K....
Materials Science Forum.  778-780 (2014)  - p. 1089-1095 , 2014
Link: https://doi.org/10.4028/..
 
1-15