Caesar, Markus
38  Ergebnisse:
Personensuche X
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3

Impact of buffer leakage on intrinsic reliability of 650V A..:

Moens, P ; Banerjee, A ; Uren, Michael...
Moens , P , Banerjee , A , Uren , M , Meneghini , M , Karboyan , S , Chatterjee , I , Vanmeerbeek , P , Caesar , M , Liu , C , Salih , A , Zanoni , E , Meneghesso , G , Kuball , M & Tack , M 2016 , Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs . in 2015 IEEE International Electron Devices Meeting (IEDM 2015) : Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA . Institute of Electrical and Electronics Engineers (IEEE) , pp. 35.2.1-35.2.4 , 61st IEEE International Electron Devices Meeting, IEDM 2015 , Washington , United States , 7/12/15 . https://doi.org/10.1109/IEDM.2015.7409831.  , 2016
 
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4

Electron Trapping in GaN-on-Si Power HEMTs:Impact of Positi..:

Uren, Michael J ; Caesar, Markus ; Chatterjee, Indranil...
Uren , M J , Caesar , M , Chatterjee , I , Karboyan , S , Meneghini , M , Meneghesso , G , Zanoni , E , Moens , P , Vanmeerbeek , P & Kuball , M 2015 , ' Electron Trapping in GaN-on-Si Power HEMTs : Impact of Positive Substrate Bias ' , Eleventh International Conference on Networking and Services (ICNS 2015) , Rome , Italy , 24/05/15 - 29/05/15 ..  , 2015
 
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5

Electric Field Reduction in C-Doped AlGaN/GaN on Si High El..:

Uren, Michael J ; Caesar, Markus ; Karboyan, Serge...
Uren , M J , Caesar , M , Karboyan , S , Moens , P , Vanmeerbeek , P & Kuball , M H H 2015 , ' Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors ' , IEEE Electron Device Letters , vol. 36 , no. 8 , pp. 826-828 . https://doi.org/10.1109/led.2015.2442293.  , 2015
 
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6

Charge movement in a GaN-based hetero-structure field effec..:

Pooth, Alexander ; Uren, Michael J ; Caesar, Markus..
Pooth , A , Uren , M J , Caesar , M , Martin , T & Kuball , M H H 2015 , ' Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias ' , Journal of Applied Physics , vol. 118 , no. 21 , 215701 . https://doi.org/10.1063/1.4936780.  , 2015
 
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7

Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Ve..:

Uren, Michael J ; Silvestri, Marco ; Caesar, Markus...
Uren , M J , Silvestri , M , Caesar , M , Hurkx , G , Croon , J , Šonský , J & Kuball , M 2014 , ' Intentionally Carbon-Doped AlGaN/GaN HEMTs : Necessity for Vertical Leakage Paths ' , IEEE Electron Device Letters , vol. 35 , no. 3 , pp. 327-329 . https://doi.org/10.1109/LED.2013.2297626.  , 2014
 
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8

Buffer Transport Mechanisms in Intentionally Carbon Doped G..:

Uren, Michael J ; Caesar, Markus ; Gajda, Mark.
Uren , M J , Caesar , M , Gajda , M & Kuball , M 2014 , ' Buffer Transport Mechanisms in Intentionally Carbon Doped GaN Heterojunction Field Effect Transistors ' , Applied Physics Letters , vol. 104 , pp. 263505 . https://doi.org/10.1063/1.4885695.  , 2014
 
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9

IL-33 controls IL-22-dependent antibacterial defense by mod..:

Röwekamp, Ivo ; Maschirow, Laura ; Rabes, Anne...
Proceedings of the National Academy of Sciences.  121 (2024)  22 - p. , 2024
 
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11

Development of an Updated Global Land In Situ‐Based Data Se..:

Dunn, Robert J. H. ; Alexander, Lisa V. ; Donat, Markus G....
Journal of Geophysical Research: Atmospheres.  125 (2020)  16 - p. , 2020
 
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