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X
Capper, P.
311  Ergebnisse:
Personensuche X
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1

Progress in bulk cadmium mercury telluride over the last 25..:

Capper, P.
Journal of Materials Science: Materials in Electronics.  26 (2015)  7 - p. 4380-4388 , 2015
Link: https://doi.org/10.1007/..
 
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2

Activation kinetics of the As acceptor in HgCdTe:

Shaw, D. ; Capper, P.
Journal of Materials Science: Materials in Electronics.  19 (2007)  1 - p. 67-73 , 2007
Link: https://doi.org/10.1007/..
 
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3

Current status of large-area MOVPE growth of HgCdTe device ..:

Maxey, C. D. ; Fitzmaurice, J. C. ; Lau, H. W....
Journal of Electronic Materials.  35 (2006)  6 - p. 1275-1282 , 2006
Link: https://doi.org/10.1007/..
 
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4

Bulk growth of cadmium mercury telluride (CMT) using the Br..:

Capper, P. ; Maxey, C. ; Butler, C...
Journal of Crystal Growth.  275 (2005)  1-2 - p. 259-275 , 2005
Link: https://doi.org/10.1016/..
 
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5

Metal-organic vapor-phase epitaxial growth of HgCdTe device..:

Maxey, C. D. ; Camplin, J. P. ; Guilfoy, I. T....
Journal of Electronic Materials.  32 (2003)  7 - p. 656-660 , 2003
Link: https://doi.org/10.1007/..
 
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6

Growth of long wavelength infrared MCT emitters on conducti..:

Maxey, C. D. ; Ahmed, M. U. ; Jones, C. L....
Journal of Electronic Materials.  30 (2001)  6 - p. 723-727 , 2001
Link: https://doi.org/10.1007/..
 
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7

Low temperature thermal annealing effects in bulk and epita..:

Capper, P. ; Maxey, C. D. ; Jones, C. L....
Journal of Electronic Materials.  28 (1999)  6 - p. 637-648 , 1999
Link: https://doi.org/10.1007/..
 
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8

Sulphur diffusion in CdTe and the phase diagram of the CdS–..:

Lane, D.W. ; Conibeer, G.J. ; Wood, D.A....
Journal of Crystal Growth.  197 (1999)  3 - p. 743-748 , 1999
Link: https://doi.org/10.1016/..
 
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9

Zn concentration determination in CdZnTe by NIR spectroscop:

Maxey, C.D. ; Gower, J.E. ; Capper, P....
Journal of Crystal Growth.  197 (1999)  3 - p. 427-434 , 1999
Link: https://doi.org/10.1016/..
 
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10

Matrix and impurity element distributions in CdHgTe (CMT) a..:

Capper, P. ; O'Keefe, E.S. ; Maxey, C....
Journal of Crystal Growth.  161 (1996)  1-4 - p. 104-118 , 1996
Link: https://doi.org/10.1016/..
 
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11

Extended defects in epitaxial cadmium mercury telluride:

Wasenczuk, A. ; Willoughby, A.F.W. ; Mackett, P....
Journal of Crystal Growth.  159 (1996)  1-4 - p. 1090-1095 , 1996
Link: https://doi.org/10.1016/..
 
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12

N-Type Hg1−xCdxTe: Undoped x = 0.3 LPE material for sprite ..:

McAllister, A. ; O'keefe, E. S. ; Capper, P....
Journal of Electronic Materials.  25 (1996)  6 - p. 1014-1018 , 1996
Link: https://doi.org/10.1007/..
 
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13

Phase modulated ellipsometry used for composition control d..:

Hartley, R. H. ; Folkard, M. A. ; Carr, D....
Journal of Electronic Materials.  25 (1996)  9 - p. 1521-1526 , 1996
Link: https://doi.org/10.1007/..
 
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14

Determination of Shockley - Read trap parameters in n- and ..:

Barton, S C ; Capper, P ; Jones, C L..
Semiconductor Science and Technology.  11 (1996)  8 - p. 1163-1167 , 1996
Link: https://doi.org/10.1088/..
 
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15

A comparison of the diffusion of iodine into CdTe, Hg0.8Cd0..:

Jones, E. D. ; Malzbender, J. ; Shaw, N...
Journal of Electronic Materials.  24 (1995)  9 - p. 1225-1229 , 1995
Link: https://doi.org/10.1007/..
 
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