Celler, G. K.
228  Ergebnisse:
Personensuche X
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1

Ultrahigh sensitivity SIMS analysis of oxygen in silicon:

Jakiela, R. ; Barcz, A. ; Sarnecki, J..
Surface and Interface Analysis.  50 (2018)  7 - p. 729-733 , 2018
 
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2

Incorporation of oxygen in SiC implanted with hydrogen:

Barcz, A. ; Jakieła, R. ; Kozubal, M...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  365 (2015)  - p. 146-149 , 2015
 
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3

Properties of H+Implanted 4H-SiC as Related to Exfoliation ..:

Amarasinghe, V. P. ; Wielunski, L. ; Barcz, A...
ECS Journal of Solid State Science and Technology.  3 (2014)  3 - p. P37-P42 , 2014
 
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8

Frontiers of silicon-on-insulator:

Celler, G. K. ; Cristoloveanu, Sorin
Journal of Applied Physics.  93 (2003)  9 - p. 4955-4978 , 2003
 
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9

Measurements of low field mobility in ultra-thin SOI n- and..:

Mastrapasqua, M ; Esseni, D ; Celler, G.K...
Microelectronic Engineering.  59 (2001)  1-4 - p. 409-416 , 2001
 
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10

Etching of Silicon by the RCA Standard Clean 1:

Celler, G. K.
Electrochemical and Solid-State Letters.  3 (1999)  1 - p. 47 , 1999
 
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11

Boron pileup and clustering in silicon-on-insulator films:

Vuong, H.-H. ; Gossmann, H.-J. ; Pelaz, L....
Applied Physics Letters.  75 (1999)  8 - p. 1083-1085 , 1999
 
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14

Stress relaxation in Mo/Si multilayer structures:

Kola, R. R. ; Windt, D. L. ; Waskiewicz, W. K....
Applied Physics Letters.  60 (1992)  25 - p. 3120-3122 , 1992
 
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