E-LIB Suche - Ergebnisse für: Chaly, V P

1

nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wa..:

Kulikov, V. B. ; Maslov, D. V. ; Sabirov, A. R....
Semiconductors. 52 (2018) 13 - p. 1743-1747 , 2018

2

InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal ..:

Dudin, A. L. ; Katsavets, N. I. ; Krasovitsky, D. M....
Journal of Communications Technology and Electronics. 63 (2018) 3 - p. 296-299 , 2018

Link: https://doi.org/10.1134/..

3

Technology development for GaN based power microwave DHFET:

Alexeev, A N ; Chaly, V P ; Krasovitsky, D M...
Journal of Physics: Conference Series. 690 (2016) - p. 012042 , 2016

Link: https://doi.org/10.1088/..

4

Specific features of NH3 and plasma-assisted MBE in the fab..:

Alexeev, A. N. ; Krasovitsky, D. M. ; Petrov, S. I....
Semiconductors. 49 (2015) 1 - p. 92-94 , 2015

Link: https://doi.org/10.1134/..

5

Features and benefits of III-N growth by ammonia-MBE and pl..:

Alexeev, A N ; Chaly, V P ; Krasovitsky, D M...
Journal of Physics: Conference Series. 541 (2014) - p. 012030 , 2014

Link: https://doi.org/10.1088/..

6

Photosensitivity of structures with quantum wells under nor..:

Kulikov, V. B. ; Chaly, V. P.
Semiconductors. 48 (2014) 2 - p. 212-215 , 2014

Link: https://doi.org/10.1134/..

7

Deposition of GaN Layers with a lowered dislocation density..:

Alexeev, A. N. ; Krasovitsky, D. M. ; Petrov, S. I..
Semiconductors. 46 (2012) 11 - p. 1429-1431 , 2012

Link: https://doi.org/10.1134/..

8

High-power low-threshold laser diodes (λ=0.94μm) based on M..:

Aleksandrov, S. B. ; Alekseev, A. N. ; Demidov, D. M....
Technical Physics Letters. 28 (2002) 8 - p. 696-698 , 2002

Link: https://doi.org/10.1134/..

9

Indium droplet formation during molecular beam epitaxy of I..:

Chaly, V.P ; Borisov, B.A ; Demidov, D.M...
Journal of Crystal Growth. 206 (1999) 1-2 - p. 147-149 , 1999

Link: https://doi.org/10.1016/..

10

Mechanisms of optical confinement in phase-locked laser arr..:

Chaly, V P ; Karpov, S Yu ; Ter-Martirosyan, A L..
Semiconductor Science and Technology. 11 (1996) 3 - p. 372-379 , 1996

Link: https://doi.org/10.1088/..

11

Use of molecular beam epitaxy for high-power AlGaAs laser p..:

Chaly, V.P. ; Demidov, D.M. ; Fokin, G.A....
Journal of Crystal Growth. 150 (1995) - p. 1350-1353 , 1995

Link: https://doi.org/10.1016/..

12

A degradation rate study of MBE-grown high-power AlGaAs las..:

Chaly, V P ; Etinberg, M I ; Fokin, G A...
Semiconductor Science and Technology. 9 (1994) 4 - p. 345-348 , 1994

Link: https://doi.org/10.1088/..

13

A binuclear atom -- a special type of close bound state bet..:

Chaly, V. P ; Gurevich, V. L ; Pogorelsky, M. Yu.
http://arxiv.org/abs/physics/0606082. , 2006

Link: http://arxiv.org/abs/phy..

14

Parametric mapping of [18F]FPCIT binding in early stage Par..:

Ma, Y. ; Dhawan, V. ; Mentis, M....
Synapse. 45 (2002) 2 - p. 125-133 , 2002

Link: https://doi.org/10.1002/..

15

Contributors:

, In: Quantification of Brain Function Using PET,

Adam, M. ; Alpert, Nathaniel M. ; Anderson, J.R.... - p. xvii-xxvi , 1996

Link: https://doi.org/10.1016/..