E-LIB Suche - Ergebnisse für: Chantre, A.

1

Extrinsic base resistance optimization in DPSA-SEG SiGe:C H..:

, In: 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),

Canderle, E. ; Chevalier, P. ; Montagne, A.... - p. 1-4 , 2012

Link: https://doi.org/10.1109/..

2

A selective epitaxy collector module for high-speed Si/SiGe..:

Geynet, B. ; Chevalier, P. ; Brossard, F....
Solid-State Electronics. 53 (2009) 8 - p. 873-876 , 2009

Link: https://doi.org/10.1016/..

3

SiGe heterojunction bipolar transistor issues towards high ..:

Ramirez-Garcia, E. ; Zerounian, N. ; Crozat, P....
Cryogenics. 49 (2009) 11 - p. 620-625 , 2009

Link: https://doi.org/10.1016/..

4

SiGe HBTs featuring fT ≫400GHz at room temperature:

, In: 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting,

Geynet, B. ; Danneville, F. ; Dutartre, D.... - p. None , 2008

Link: https://doi.org/10.1109/..

5

Design and Modeling Considerations for Fully-Integrated Sil..:

, In: 2007 IEEE International Workshop on Radio-Frequency Integration Technology,

Nicolson, S.T. ; Laskin, E. ; Khanpour, M.... - p. None , 2007

Link: https://doi.org/10.1109/..

6

Experimental Study of Metallic Emitter SiGeC HBTs:

, In: 2006 Bipolar/BiCMOS Circuits and Technology Meeting,

Chantre, A. ; Aniel, F. ; Zerounian, N.... - p. None , 2006

Link: https://doi.org/10.1109/..

7

Thin film SOI HBT: A study of the effect of substrate bias ..:

Fregonese, S. ; Avenier, G. ; Maneux, C...
Solid-State Electronics. 50 (2006) 11-12 - p. 1673-1676 , 2006

Link: https://doi.org/10.1016/..

8

Inelastic electron scattering observation using energy filt..:

Pantel, R ; Jullian, S ; Delille, D...
Micron. 34 (2003) 3-5 - p. 239-247 , 2003

Link: https://doi.org/10.1016/..

9

A 70-GHz-fT double-polysilicon SiGe HBT using a non selecti..:

Baudry, H ; Fellous, C ; Martinet, B...
Materials Science and Engineering: B. 89 (2002) 1-3 - p. 21-25 , 2002

Link: https://doi.org/10.1016/..

10

Investigation of deep traps in silicon–germanium epitaxial ..:

Militaru, L ; Souifi, A ; Mouis, M..
Microelectronics Reliability. 41 (2001) 2 - p. 253-263 , 2001

Link: https://doi.org/10.1016/..

11

Evaluation of transport properties of ozonized poly/mono in..:

Niel, S. ; Chantre, A. ; Llinarès, P...
Solid-State Electronics. 44 (2000) 6 - p. 963-967 , 2000

Link: https://doi.org/10.1016/..

12

Investigation on Base-Emitter Reverse Biasing: Light Emissi..:

Vendrame, L. ; Ailloud, L. ; Pontcharra, J. De...
Japanese Journal of Applied Physics. 38 (1999) 8R - p. 4648 , 1999

Link: https://doi.org/10.1143/..

13

Epitaxial growth of SiGe layers for BiCMOS applications:

Regolini, J.L. ; Pejnefors, J. ; Baffert, T....
Materials Science in Semiconductor Processing. 1 (1998) 3-4 - p. 317-323 , 1998

Link: https://doi.org/10.1016/..

14

Copper contamination effects in 0.5 μm BiCMOS technology:

Gravier, T. ; Braud, F. ; Torres, J....
Microelectronic Engineering. 33 (1997) 1-4 - p. 211-216 , 1997

Link: https://doi.org/10.1016/..

15

Low frequency (1/f ) noise model for the base current in po..:

Mounib, A. ; Ghibaudo, G. ; Balestra, F....
Journal of Applied Physics. 79 (1996) 6 - p. 3330-3336 , 1996

Link: https://doi.org/10.1063/..