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Chao, Tien-Sheng
1848  Ergebnisse:
Personensuche X
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1

Large Memory Window Antifuse HfO₂-Based One-Resistor and On..:

Hsieh, Dong-Ru ; Ni, Jia-Chian ; Yeh, Wei-Ju...
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2824-2829 , 2024
Link: https://doi.org/10.1109/..
 
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2

Investigation on Germanium Transistors with HfOx-Based Gate..:

Hong, Tzu-Chieh ; Su, Chun-Jung ; Lee, Yao-Jen...
ECS Journal of Solid State Science and Technology.  , 2024
Link: https://doi.org/10.1149/..
 
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3

Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Propert..:

Lin, Kun-Tao ; Lo, Chieh ; Chang, Shu-Chieh..
IEEE Transactions on Electron Devices.  71 (2024)  2 - p. 1072-1077 , 2024
Link: https://doi.org/10.1109/..
 
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4

Highly Scaled BEOL-Compatible Thin Film Transistors With Ul..:

Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon...
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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5

Ti supersaturated Si by microwave annealing processes:

Olea, J ; González-Díaz, G ; Pastor, D...
Semiconductor Science and Technology.  38 (2023)  2 - p. 024004 , 2023
Link: https://doi.org/10.1088/..
 
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6

Highly Stable Short Channel Ultrathin Atomic Layer Deposite..:

Liang, Yan-Kui ; Li, Wei-Li ; Zheng, Jun-Yang...
IEEE Electron Device Letters.  44 (2023)  10 - p. 1644-1647 , 2023
Link: https://doi.org/10.1109/..
 
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7

Reliability of Multiple-Layer Stacked Gate-All-Around Poly-..:

Hsieh, Dong-Ru ; Lee, Chia-Chin ; Hong, Tzu-Chieh..
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3915-3920 , 2023
Link: https://doi.org/10.1109/..
 
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8

Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelec..:

Lo, Chieh ; Chang, Shu-Chieh ; Lin, Kun-Tao...
IEEE Electron Device Letters.  44 (2023)  6 - p. 883-886 , 2023
Link: https://doi.org/10.1109/..
 
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9

Optimization of Ferroelectricity in Al-Doped HfO2 Capacitor..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Hsieh, Dong-Ru ; Luo, Huai-En ; Ni, Jia-Chian... - p. 49-50 , 2023
Link: https://doi.org/10.23919..
 
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10

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Liang, Yan-Kui ; Zheng, June-Yang ; Lin, Yu-Lon... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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11

Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hfx..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Hsieh, Dong-Ru ; Lee, Chia-Chin ; Chao, Tien-Sheng - p. 121-122 , 2023
Link: https://doi.org/10.23919..
 
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12

First Demonstration of Highly Scaled Atomic Layer Deposited..:

, In: 2023 International Electron Devices Meeting (IEDM),
Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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13

Corrections to "Susceptor Coupling for the Uniformity and D..:

Lee, Yao-Jen ; Hsueh, Fu-Kuo ; Current, Michael I...
IEEE Electron Device Letters.  44 (2023)  6 - p. 1015-1015 , 2023
Link: https://doi.org/10.1109/..
 
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14

Record-High Memory Window and Robust Retention Anti-Fuse OT..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Hsieh, Dong-Ru ; Ni, Jia-Chian ; Yeh, Wei-Ju... - p. 113-114 , 2023
Link: https://doi.org/10.23919..
 
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15

Corrections to "Low-Temperature Microwave Annealing Process..:

Lee, Yao-Jen ; Cho, Ta-Chun ; Chuang, Shang-Shiun...
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3983-3983 , 2023
Link: https://doi.org/10.1109/..
 
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