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Chen, Jone F.
451  Ergebnisse:
Personensuche X
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1

Simulation-Based Study of Low Minimum Operating Voltage SRA..:

Wu, Yi-Ting ; Ding, Fei ; Chiang, Meng-Hsueh..
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 1823-1829 , 2022
Link: https://doi.org/10.1109/..
 
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2

Investigating the Photodetectors and pH Sensors of Two-Dime..:

Chang, Sheng-Po ; Chen, Tzu-Hsin ; Liou, Guan-Yuan...
ECS Journal of Solid State Science and Technology.  10 (2021)  5 - p. 055015 , 2021
Link: https://doi.org/10.1149/..
 
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3

Characteristics and reliability of metal–oxide–semiconducto..:

Chen, Jone F. ; Tsai, Yen-Lin ; Chen, Chun-Yen...
Japanese Journal of Applied Physics.  57 (2018)  4S - p. 04FD01 , 2018
Link: https://doi.org/10.7567/..
 
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4

Investigation of characteristics and hot-carrier reliabilit..:

Tsai, Yen-Lin ; Chen, Jone F ; Shen, Shang-Feng...
Semiconductor Science and Technology.  33 (2018)  12 - p. 125019 , 2018
Link: https://doi.org/10.1088/..
 
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5

Analysis of high-voltage metal–oxide–semiconductor transist..:

Chen, Jone F. ; Ai, Teng-Jen ; Tsai, Yan-Lin...
Japanese Journal of Applied Physics.  55 (2016)  8S2 - p. 08PD04 , 2016
Link: https://doi.org/10.7567/..
 
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6

Drift region doping effects on characteristics and reliabil..:

Chen, Jone F. ; Chang, Chun-Po ; Liu, Yu Ming...
Japanese Journal of Applied Physics.  55 (2015)  1S - p. 01AD03 , 2015
Link: https://doi.org/10.7567/..
 
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7

Two‐stage hot‐carrier‐induced degradation of p‐type LDMOS t..:

Chen, Jone F. ; Chen, Tzu‐Hsiang ; Ai, Deng‐Ren
Electronics Letters.  50 (2014)  23 - p. 1751-1753 , 2014
Link: https://doi.org/10.1049/..
 
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8

Characteristics of Sub-50 nm NAND Flash Devices with Variou..:

Yan, Chin-Rung ; Chen, Jone F. ; Lee, Ya-Jui...
Japanese Journal of Applied Physics.  52 (2013)  11S - p. 11NA06 , 2013
Link: https://doi.org/10.7567/..
 
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9

Characteristics of Lateral Diffused Metal–Oxide–Semiconduct..:

Yan, Chin-Rung ; Chen, Jone F. ; Lin, Chung-Yi...
Japanese Journal of Applied Physics.  52 (2013)  4S - p. 04CC07 , 2013
Link: https://doi.org/10.7567/..
 
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10

Ultrathin DPN STI SiON liner for 40nm low-power CMOS techno..:

Hu, Chan-Yuan ; Chen, Jone F. ; Chen, Shih-Chih...
Solid-State Electronics.  54 (2010)  5 - p. 564-567 , 2010
Link: https://doi.org/10.1016/..
 
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11

The direct evidence of substrate potential propagation in a..:

Yang, Dao-Hong ; Chen, Jone F. ; Wu, Kuo-Ming..
Solid-State Electronics.  54 (2010)  7 - p. 728-731 , 2010
Link: https://doi.org/10.1016/..
 
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12

Mechanism and Modeling of On-Resistance Degradation in n-Ty..:

Chen, Jone F. ; Tian, Kuen-Shiuan ; Chen, Shiang-Yu..
Japanese Journal of Applied Physics.  48 (2009)  4S - p. 04C040 , 2009
Link: https://doi.org/10.1143/..
 
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13

Investigation of Hot-Carrier-Induced Degradation Mechanisms..:

Chen, Jone F. ; Chen, Shiang-Yu ; Wu, Kuo-Ming.
Japanese Journal of Applied Physics.  48 (2009)  4S - p. 04C039 , 2009
Link: https://doi.org/10.1143/..
 
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14

Channel length dependence of hot-carrier-induced degradatio..:

Chen, Jone F. ; Chen, Shiang-Yu ; Wu, Kuo-Ming.
Applied Physics Letters.  93 (2008)  22 - p. , 2008
Link: https://doi.org/10.1063/..
 
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15

An Investigation on Hot-Carrier Reliability and Degradation..:

Tian, Kuen-Shiuan ; Chen, Jone F. ; Chen, Shiang-Yu...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 2641 , 2008
Link: https://doi.org/10.1143/..
 
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