E-LIB Suche - Ergebnisse für: Chevtchenko, Serguei

1

Investigation of Traps Impact on PAE and Linearity of AlGaN..:

Beleniotis, Petros ; Zervos, Christos ; Krause, Sascha...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3582-3589 , 2024

Link: https://doi.org/10.1109/..

2

Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT ..:

Krishnaji Rao, Megha ; Doerner, Ralf ; Chevtchenko, Serguei A...
IEEE Microwave and Wireless Technology Letters. 33 (2023) 10 - p. 1446-1449 , 2023

Link: https://doi.org/10.1109/..

3

Highly Robust GaN Power Amplifier at Millimeter-Wave Freque..:

Tsao, Yi-Fan ; Chiu, Ping-Hsun ; Chevtchenko, Serguei...
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6244-6249 , 2023

Link: https://doi.org/10.1109/..

4

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

5

Demonstration of a Millimeter-wave High-Power Transceiver M..:

, In: 2023 Asia-Pacific Microwave Conference (APMC),

Tsao, Yi-Fan ; Wang, Yuan ; Chiu, Ping-Hsun... - p. 61-63 , 2023

Link: https://doi.org/10.1109/..

6

Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under I..:

, In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC),

Kaule, Evelyne ; Luo, Peng ; Chevtchenko, Serguei A... - p. 9-12 , 2023

Link: https://doi.org/10.23919..

7

Localization of Trapping Effects in GaN HEMTs with Pulsed S..:

, In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC),

Beleniotis, Petros ; Schnieder, Frank ; Chevtchenko, Serguei. - p. 149-152 , 2022

Link: https://doi.org/10.23919..

8

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transi..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Brunner, Frank..
physica status solidi (a). 219 (2022) 8 - p. , 2022

Link: https://doi.org/10.1002/..

9

Modeling of Hot-Via Technology for System-in-Package at Mil..:

, In: 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT),

Tsao, Yi-Fan ; Wang, Yuan ; Chevtchenko, Serguei... - p. 88-89 , 2022

Link: https://doi.org/10.1109/..

10

Threshold voltage shift induced by intrinsic stress in gate..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Ostermay, Ina.
Semiconductor Science and Technology. 36 (2021) 5 - p. 055018 , 2021

Link: https://doi.org/10.1088/..

11

Terahertz emission from biased AlGaN/GaN high-electron-mobi..:

Lisauskas, Alvydas ; Rämer, Adam ; Burakevič, Marek...
Journal of Applied Physics. 125 (2019) 15 - p. , 2019

Link: https://doi.org/10.1063/..

12

Effect of buffer thickness on DC and microwave performance ..:

Chevtchenko, Serguei A. ; Brunner, Frank ; Würfl, Joachim.
physica status solidi (a). 207 (2010) 6 - p. 1505-1508 , 2010

Link: https://doi.org/10.1002/..

13

Defect reduction in GaN epilayers grown by metal-organic ch..:

Xie, Jinqiao ; Chevtchenko, Serguei A. ; Özgür, Ümit.
Applied Physics Letters. 90 (2007) 26 - p. , 2007

Link: https://doi.org/10.1063/..

14

I-V characteristics of Au∕Ni Schottky diodes on GaN with Si..:

Xie, Jinqiao ; Fu, Yi ; Ni, Xianfeng..
Applied Physics Letters. 89 (2006) 15 - p. , 2006

Link: https://doi.org/10.1063/..

15

GaN resistive hydrogen gas sensors:

Yun, Feng ; Chevtchenko, Serguei ; Moon, Yong-Tae...
Applied Physics Letters. 87 (2005) 7 - p. , 2005

Link: https://doi.org/10.1063/..