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Chin, P.T.
8023  Ergebnisse:
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1

The relationship between varicoceles and iliac vein compres..:

Chin, P.T. ; Villalba, L.
European Urology.  83 (2023)  - p. S952 , 2023
Link: https://doi.org/10.1016/..
 
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2

879 THE PROSTATIC URETHRAL LIFT: UPDATE ON A NOVEL TREATMEN..:

Chin, P.T. ; Woo, H.H. ; Mc Nicholas, T.A....
European Urology Supplements.  9 (2010)  2 - p. 278 , 2010
Link: https://doi.org/10.1016/..
 
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3

Characterization of GaAs/AlGaAs heterojunction bipolar tran..:

Han, A. C. ; Wojtowicz, M. ; Block, T. R....
Journal of Applied Physics.  86 (1999)  11 - p. 6160-6163 , 1999
Link: https://doi.org/10.1063/..
 
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4

INFERIOR VENA CAVAL RESECTION WITH AUTOGENOUS PERITONEO‐FAS..:

Chin, P. T. ; Gallagher, P. J. ; Stephen, M. S.
Australian and New Zealand Journal of Surgery.  69 (1999)  5 - p. 391-392 , 1999
Link: https://doi.org/10.1046/..
 
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5

Evidence for misfit dislocation-related carrier accumulatio..:

Gopal, V. ; Kvam, E. P. ; Chin, T. P..
Applied Physics Letters.  72 (1998)  18 - p. 2319-2321 , 1998
Link: https://doi.org/10.1063/..
 
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6

Self-forming InAs/GaP quantum dots by direct island growth:

Leon, R. ; Lobo, C. ; Chin, T. P....
Applied Physics Letters.  72 (1998)  11 - p. 1356-1358 , 1998
Link: https://doi.org/10.1063/..
 
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7

Electrical characteristics of nearly relaxed InAs/GaP heter..:

Chen, E. H. ; Chin, T. P. ; Woodall, J. M..
Applied Physics Letters.  70 (1997)  12 - p. 1551-1553 , 1997
Link: https://doi.org/10.1063/..
 
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8

Indirect transitions, free and impurity-bound excitons in g..:

Alawadhi, H. ; Vogelgesang, R. ; Ramdas, A. K...
Journal of Applied Physics.  82 (1997)  9 - p. 4331-4337 , 1997
Link: https://doi.org/10.1063/..
 
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9

High voltage GaInP/GaAs dual-material Schottky rectifiers:

Schoen, K. J. ; Harmon, E. S. ; Woodall, J. M..
Applied Physics Letters.  71 (1997)  4 - p. 518-520 , 1997
Link: https://doi.org/10.1063/..
 
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10

Growth and transport properties of thin Bi films on InP(110:

Briner, B G ; Feenstra, R M ; Chin, T P.
Semiconductor Science and Technology.  11 (1996)  11S - p. 1575-1581 , 1996
Link: https://doi.org/10.1088/..
 
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11

Use of annealed low-temperature grown GaAs as a selective p..:

Chen, E. H. ; McInturff, D. T. ; Chin, T. P...
Applied Physics Letters.  68 (1996)  12 - p. 1678-1680 , 1996
Link: https://doi.org/10.1063/..
 
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12

Incoherent interface of InAs grown directly on GaP(001):

Chang, J. C. P. ; Chin, T. P. ; Woodall, J. M.
Applied Physics Letters.  69 (1996)  7 - p. 981-983 , 1996
Link: https://doi.org/10.1063/..
 
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13

Nonalloyed ohmic contacts to heavily Be-doped GaP and InxGa..:

Tagare, M. V. ; Chin, T. P. ; Woodall, J. M.
Applied Physics Letters.  68 (1996)  24 - p. 3485-3487 , 1996
Link: https://doi.org/10.1063/..
 
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14

Erratum: ''Incoherent interface of InAs grown directly on G..:

Chang, J. C. P. ; Chin, T. P. ; Woodall, J. M.
Applied Physics Letters.  69 (1996)  17 - p. 2609-2609 , 1996
Link: https://doi.org/10.1063/..
 
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15

Impact ionization coefficients in (100) GaInP:

Fu, S.-L. ; Chin, T. P. ; Ho, M. C...
Applied Physics Letters.  66 (1995)  25 - p. 3507-3509 , 1995
Link: https://doi.org/10.1063/..
 
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