E-LIB Suche - Ergebnisse für: Chvála, A.

1

Average Temperature Determination of AlGaN/GaN HEMT Utilizi..:

Florovič, M. ; Kováč, J. ; Chvála, A....
IEEE Transactions on Electron Devices. 70 (2023) 11 - p. 5803-5806 , 2023

Link: https://doi.org/10.1109/..

2

Study of the defect distribution in power SiC-MOSFET before..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Stuchlikova, L. ; Matus, M. ; Cincurak, D.... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

3

Simulation of Thermo Mechanical Properties and Reliability ..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Koval, F. ; Chvala, A. - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

4

HEMT Average Temperature Determination Utilizing Low-Power ..:

Florovic, M. ; Kovac, J. ; Chvala, A....
IEEE Transactions on Electron Devices. 69 (2022) 10 - p. 5484-5489 , 2022

Link: https://doi.org/10.1109/..

5

Electro-Thermo-Mechanical Simulation Analysis and Optimizat..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Chvala, A. ; Marek, J. ; Kozarik, J.... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

6

Simulation Study of Thermo-Mechanical Properties of Power T..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Chvala, A. ; Marek, J. ; Satka, A.. - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

7

Effect of Repetitive Short-Circuit Stress on dynRdson of p-..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Kozarik, J. ; Marek, J. ; Chvala, A.. - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

8

Models for the self-heating evaluation of a gallium nitride..:

Florovič, M ; Kováč jr, J ; Kováč, J...
Semiconductor Science and Technology. 36 (2021) 2 - p. 025019 , 2021

Link: https://doi.org/10.1088/..

9

Semi-insulating GaN for vertical structures: role of substr..:

Šichman, P. ; Hasenöhrl, S. ; Stoklas, R....
Materials Science in Semiconductor Processing. 118 (2020) - p. 105203 , 2020

Link: https://doi.org/10.1016/..

10

Quasi-static I-V characterization utilized for isothermal a..:

, In: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM),

Florovic, M. ; Kovac, J. ; Chvala, A... - p. 5-9 , 2020

Link: https://doi.org/10.1109/..

11

Rigorous channel temperature analysis verified for InAlN/Al..:

Florovič, M ; Szobolovszký, R ; Kováč Jr, J...
Semiconductor Science and Technology. 34 (2019) 6 - p. 065021 , 2019

Link: https://doi.org/10.1088/..

12

AlGaN/GaN HEMT channel temperature determination utilizing ..:

Florovič, M ; Szobolovszký, R ; Kováč Jr, J...
Semiconductor Science and Technology. 35 (2019) 2 - p. 025006 , 2019

Link: https://doi.org/10.1088/..

13

Technology of integrated self-aligned E/D-mode n++GaN/InAlN..:

Blaho, M ; Gregušová, D ; Haščík, Š...
Semiconductor Science and Technology. 31 (2016) 6 - p. 065011 , 2016

Link: https://doi.org/10.1088/..

14

Simulation study of interface traps and bulk traps in n++Ga..:

Molnár, M. ; Donoval, D. ; Kuzmík, J....
Applied Surface Science. 312 (2014) - p. 157-161 , 2014

Link: https://doi.org/10.1016/..

15

Electro-Thermal Analysis and Optimisation of Edge Terminati..:

Príbytný, P ; Donoval, D ; Chvála, A..
Journal of Physics: Conference Series. 494 (2014) - p. 012003 , 2014

Link: https://doi.org/10.1088/..