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Ciou, Fong-Min
45  Ergebnisse:
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1

Analysis of Breakdown-Voltage Increase on SiC Junction Barr..:

Jin, Fu-Yuan ; Chen, Po-Hsun ; Hung, Wei-Chun...
IEEE Transactions on Electron Devices.  70 (2023)  1 - p. 191-195 , 2023
Link: https://doi.org/10.1109/..
 
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2

Reliability Enhancement by Doping Boron and Fluorine in Lig..:

Yeh, Chien-Hung ; Chang, Ting-Chang ; Kuo, Ting-Tzu...
IEEE Electron Device Letters.  44 (2023)  6 - p. 971-974 , 2023
Link: https://doi.org/10.1109/..
 
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3

An Extended Method to Analyze Boron Diffusion Defects in 16..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),
Kuo, Ting-Tzu ; Chen, Ying-Chung ; Chang, Ting-Chang... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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4

A Method to Measure Polarization Signal of Nanoscale One-Tr..:

Chang, Kai-Chun ; Chen, Po-Hsun ; Chang, Ting-Chang...
IEEE Electron Device Letters.  43 (2022)  6 - p. 862-865 , 2022
Link: https://doi.org/10.1109/..
 
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5

Investigating two-stage degradation of threshold voltage in..:

Lin, Yu-Shan ; Chen, Yi-Lin ; Chang, Ting-Chang...
Semiconductor Science and Technology.  37 (2022)  2 - p. 025017 , 2022
Link: https://doi.org/10.1088/..
 
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6

Analysis of abnormal threshold voltage shift induced by sur..:

Kuo, Ting-Tzu ; Chen, Ying-Chung ; Chang, Ting-Chang...
Applied Physics Letters.  120 (2022)  23 - p. , 2022
Link: https://doi.org/10.1063/..
 
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7

Abnormal trend in hot carrier degradation with fin profile ..:

Kuo, Ting-Tzu ; Chen, Ying-Chung ; Chang, Ting-Chang...
Semiconductor Science and Technology.  37 (2022)  4 - p. 045010 , 2022
Link: https://doi.org/10.1088/..
 
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8

Analysis of the buffer trap-induced kink effect in AlGaN/Ga..:

Ciou, Fong-Min ; Chen, Po-Hsun ; Chang, Ting-Chang...
Semiconductor Science and Technology.  , 2022
Link: https://doi.org/10.1088/..
 
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9

Abnormal Threshold Voltage Degradation Under Semi-On State ..:

Lin, Jia-Hong ; Ciou, Fong-Min ; Chang, Ting-Chang...
IEEE Electron Device Letters.  43 (2022)  9 - p. 1420-1423 , 2022
Link: https://doi.org/10.1109/..
 
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10

Obtaining impact ionization-induced hole current by electri..:

Yeh, Yu-Hsuan ; Chang, Ting-Chang ; Huang, Wei-Chen...
Journal of Physics D: Applied Physics.  54 (2021)  28 - p. 285104 , 2021
Link: https://doi.org/10.1088/..
 
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11

Reliability enhancement in dipole-doped metal oxide semicon..:

Jin, Fu-Yuan ; Ciou, Fong-Min ; Hung, Wei-Chun...
Applied Physics Express.  14 (2021)  3 - p. 034002 , 2021
Link: https://doi.org/10.35848..
 
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12

Investigation of degradation behavior under negative bias t..:

Chang, Yen-Cheng ; Lin, Chien-Yu ; Chang, Ting-Chang...
Journal of Physics D: Applied Physics.  54 (2021)  47 - p. 475103 , 2021
Link: https://doi.org/10.1088/..
 
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13

Abnormal hump in low temperature in SiGe devices with silic..:

Huang, Wei-Chen ; Chen, Po-Hsun ; Lin, Chih-Yang...
Journal of Physics D: Applied Physics.  54 (2021)  41 - p. 415105 , 2021
Link: https://doi.org/10.1088/..
 
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14

Investigation of degradation mechanism after negative bias ..:

Ciou, Fong-Min ; Chang, Yen-Cheng ; Chen, Po-Hsun...
Semiconductor Science and Technology.  37 (2021)  1 - p. 015009 , 2021
Link: https://doi.org/10.1088/..
 
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15

Modified Conductance Method for The Extraction of Interface..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Chien, Yu-Chieh ; Ciou, Fong-Min ; Lin, Yu-Shan... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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