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Clarysse, T.
71  Ergebnisse:
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1

Surface contamination and electrical damage by focused ion ..:

Bender, H ; Franquet, A ; Drijbooms, C...
Semiconductor Science and Technology.  30 (2015)  11 - p. 114015 , 2015
Link: https://doi.org/10.1088/..
 
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2

Diamond nanoprobes for electrical probing of nanoelectronic..:

Hantschel, T. ; Clarysse, T. ; Ajaykumar, A....
Microelectronic Engineering.  121 (2014)  - p. 19-23 , 2014
Link: https://doi.org/10.1016/..
 
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3

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxia..:

Shimura, Y. ; Takeuchi, S. ; Nakatsuka, O....
Thin Solid Films.  520 (2012)  8 - p. 3206-3210 , 2012
Link: https://doi.org/10.1016/..
 
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4

Ge1−Sn stressors for strained-Ge CMOS:

Takeuchi, S. ; Shimura, Y. ; Nishimura, T....
Solid-State Electronics.  60 (2011)  1 - p. 53-57 , 2011
Link: https://doi.org/10.1016/..
 
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5

Characterization of GeSn materials for future Ge pMOSFETs s..:

Vincent, B. ; Shimura, Y. ; Takeuchi, S....
Microelectronic Engineering.  88 (2011)  4 - p. 342-346 , 2011
Link: https://doi.org/10.1016/..
 
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6

Use of p- and n-type vapor phase doping and sub-melt laser ..:

Nguyen, N.D. ; Rosseel, E. ; Takeuchi, S....
Thin Solid Films.  518 (2010)  6 - p. S48-S52 , 2010
Link: https://doi.org/10.1016/..
 
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7

(Invited) Assessment of Ge1-xSnx Alloys for Strained Ge CMO..:

Takeuchi, Shotaro ; Shimura, Yosuke ; Nishimura, T....
ECS Transactions.  33 (2010)  6 - p. 529-535 , 2010
Link: https://doi.org/10.1149/..
 
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8

New SPM concept for accurate and repeatable tip positioning:

Duriau, E. ; Clarysse, T. ; Moussa, A....
Microelectronic Engineering.  86 (2009)  4-6 - p. 1234-1237 , 2009
Link: https://doi.org/10.1016/..
 
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9

Millisecond flash lamp annealing of shallow implanted layer..:

Wündisch, C. ; Posselt, M. ; Schmidt, B....
Applied Physics Letters.  95 (2009)  25 - p. , 2009
Link: https://doi.org/10.1063/..
 
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10

Shallow boron implantations in Ge and the role of the pre-a..:

Simoen, E. ; Brouwers, G. ; Satta, A....
Materials Science in Semiconductor Processing.  11 (2008)  5-6 - p. 368-371 , 2008
Link: https://doi.org/10.1016/..
 
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11

On the analysis of the activation mechanisms of sub-melt la..:

Clarysse, T. ; Bogdanowicz, J. ; Goossens, J....
Materials Science and Engineering: B.  154-155 (2008)  - p. 24-30 , 2008
Link: https://doi.org/10.1016/..
 
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12

Accurate carrier profiling of n-type GaAs junctions:

Clarysse, T. ; Brammertz, G. ; Vanhaeren, D....
Materials Science in Semiconductor Processing.  11 (2008)  5-6 - p. 259-266 , 2008
Link: https://doi.org/10.1016/..
 
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13

Formation of germanium shallow junction by flash annealing:

Satta, A. ; D'Amore, A. ; Simoen, E....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  257 (2007)  1-2 - p. 157-160 , 2007
Link: https://doi.org/10.1016/..
 
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14

Fabrication of cantilevers and double AFM tips for the Nano..:

Duriau, Edouard ; Clarysse, T. ; Hantschel, T..
Microelectronic Engineering.  84 (2007)  5-8 - p. 1162-1167 , 2007
Link: https://doi.org/10.1016/..
 
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15

Diffusion, activation, and regrowth behavior of high dose P..:

Satta, A. ; Simoen, E. ; Duffy, R....
Applied Physics Letters.  88 (2006)  16 - p. , 2006
Link: https://doi.org/10.1063/..
 
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