E-LIB Suche - Ergebnisse für: Colter, P. C.

1

Reduction of V-pit density and depth in InGaN semibulk temp..:

Routh, E L ; Abdelhamid, M ; Colter, P C...
Semiconductor Science and Technology. 37 (2022) 7 - p. 075003 , 2022

Link: https://doi.org/10.1088/..

2

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD:

Hagar, B. G. ; Abdelhamid, M. ; Routh, E. L...
Applied Physics Letters. 121 (2022) 5 - p. , 2022

Link: https://doi.org/10.1063/..

3

Annealed high band gap tunnel junctions with peak current d..:

, In: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC),

Bedair, Salah M. ; Harmon, Jeffrey L. ; Carlin, C. Zachary.. - p. 2320-2322 , 2016

Link: https://doi.org/10.1109/..

4

High performance as-grown and annealed high band gap tunnel..:

Bedair, S. M. ; Harmon, Jeffrey L. ; Carlin, C. Zachary..
Applied Physics Letters. 108 (2016) 20 - p. , 2016

Link: https://doi.org/10.1063/..

5

Growth and Characterization of In x Ga1−x As/GaAs1−y P y St..:

Samberg, J. P. ; Carlin, C. Z. ; Bradshaw, G. K...
Journal of Electronic Materials. 42 (2012) 5 - p. 912-917 , 2012

Link: https://doi.org/10.1007/..

6

Overgrowth of GaN on GaN nanowires produced by mask-less et..:

Frajtag, P. ; Hosalli, A.M. ; Samberg, J.P....
Journal of Crystal Growth. 352 (2012) 1 - p. 203-208 , 2012

Link: https://doi.org/10.1016/..

7

Staggered InGaAs/GaAsP strained layer superlattices for use..:

Colter, P. C. ; Carlin, C. Z. ; Samberg, J. P...
physica status solidi (a). 208 (2011) 12 - p. 2884-2888 , 2011

Link: https://doi.org/10.1002/..

8

Characteristics of low-temperature-grown GaN films on Si(11..:

Hassan, Z. ; Lee, Y.C. ; Yam, F.K....
Solid State Communications. 133 (2005) 5 - p. 283-287 , 2005

Link: https://doi.org/10.1016/..

9

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells gro..:

Fetzer, C.M. ; King, R.R. ; Colter, P.C....
Journal of Crystal Growth. 261 (2004) 2-3 - p. 341-348 , 2004

Link: https://doi.org/10.1016/..

10

Investigation of porous silicon as a new compliant substrat..:

Namavar, F ; Colter, P.C ; Planes, N...
Materials Science and Engineering: B. 61-62 (1999) - p. 571-575 , 1999

Link: https://doi.org/10.1016/..

11

Characterization of GaN Grown on SiC on Si/SiO2/Si by Metal..:

Zhou, W. L. ; Namavar, F. ; Colter, P. C....
Journal of Materials Research. 14 (1999) 4 - p. 1171-1174 , 1999

Link: https://doi.org/10.1557/..

12

In-situ monitoring and control for MOCVD growth of AlGaAs a..:

Kussmaul, A. ; Vernon, S. ; Colter, P. C....
Journal of Electronic Materials. 26 (1997) 10 - p. 1145-1153 , 1997

Link: https://doi.org/10.1007/..

13

Atomic layer epitaxy of device quality AlGaAs and AlAs:

Hayafuji, N. ; Eldallal, G.M. ; Dip, A....
Applied Surface Science. 82-83 (1994) - p. 18-22 , 1994

Link: https://doi.org/10.1016/..

14

Silicon monolayer growth using dichlorosilane and hydrogen ..:

McIntosh, F.G. ; Colter, P.C. ; Bedair, S.M.
Thin Solid Films. 225 (1993) 1-2 - p. 183-186 , 1993

Link: https://doi.org/10.1016/..

15

Atomic layer epitaxy for resonant tunneling devices:

Seabaugh, A.C. ; Luscombe, J.H. ; Randall, J.N....
Thin Solid Films. 225 (1993) 1-2 - p. 99-104 , 1993

Link: https://doi.org/10.1016/..