E-LIB Suche - Ergebnisse für: Curutchet, A.

1

Numerical study of a sinusoidal transverse propeller:

Fasse, G ; Bayeul-Lainé, A C ; Coutier-Delgosha, O...
IOP Conference Series: Earth and Environmental Science. 240 (2019) - p. 052007 , 2019

Link: https://doi.org/10.1088/..

2

Investigation of trap induced power drift on 0.15 μm GaN te..:

Magnier, F. ; Lambert, B. ; Chang, C....
Microelectronics Reliability. 100-101 (2019) - p. 113358 , 2019

Link: https://doi.org/10.1016/..

3

TCAD simulation capabilities towards gate leakage current a..:

Mukherjee, K. ; Darracq, F. ; Curutchet, A...
Microelectronics Reliability. 76-77 (2017) - p. 350-356 , 2017

Link: https://doi.org/10.1016/..

4

Reliability assessment of ultra-short gate length AlGaN/GaN..:

Lakhdhar, H. ; Labat, N. ; Curutchet, A....
Microelectronics Reliability. 64 (2016) - p. 594-598 , 2016

Link: https://doi.org/10.1016/..

5

Investigation of the dynamic on-state resistance of AlGaN/G..:

Rzin, M. ; Labat, N. ; Malbert, N....
Microelectronics Reliability. 55 (2015) 9-10 - p. 1672-1676 , 2015

Link: https://doi.org/10.1016/..

6

Correlation between forward-reverse low-frequency noise and..:

Del Vecchio, P. ; Curutchet, A. ; Deshayes, Y....
Microelectronics Reliability. 55 (2015) 9-10 - p. 1741-1745 , 2015

Link: https://doi.org/10.1016/..

7

Influence of gate leakage current on AlGaN/GaN HEMTs eviden..:

Karboyan, S. ; Tartarin, J.G. ; Rzin, M....
Microelectronics Reliability. 53 (2013) 9-11 - p. 1491-1495 , 2013

Link: https://doi.org/10.1016/..

8

Analysis of Schottky gate degradation evolution in AlGaN/Ga..:

Brunel, L. ; Lambert, B. ; Mezenge, P....
Microelectronics Reliability. 53 (2013) 9-11 - p. 1450-1455 , 2013

Link: https://doi.org/10.1016/..

9

Influence of Expectations Created by Label on Consumers Acc..:

Arcia, P.L. ; Curutchet, A. ; Costell, E..
Journal of Sensory Studies. 27 (2012) 5 - p. 344-351 , 2012

Link: https://doi.org/10.1111/..

10

Evidence of relationship between mechanical stress and leak..:

Lambert, B. ; Labat, N. ; Carisetti, D....
Microelectronics Reliability. 52 (2012) 9-10 - p. 2184-2187 , 2012

Link: https://doi.org/10.1016/..

11

Three-terminal junctions operating as mixers, frequency dou..:

Iñiguez-de-la-Torre, I ; González, T ; Pardo, D...
Semiconductor Science and Technology. 25 (2010) 12 - p. 125013 , 2010

Link: https://doi.org/10.1088/..

12

Characterisation and modelling of parasitic effects and fai..:

Malbert, N. ; Labat, N. ; Curutchet, A....
Microelectronics Reliability. 49 (2009) 9-11 - p. 1216-1221 , 2009

Link: https://doi.org/10.1016/..

13

Characterization of Carbon Nanotube Field Effect Transistor..:

, In: 2008 71st ARFTG Microwave Measurement Conference,

Gaquiere, C. ; Curutchet, A. ; Theron, D.... - p. None , 2008

Link: https://doi.org/10.1109/..

14

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequ..:

Sozza, A. ; Curutchet, A. ; Dua, C....
Microelectronics Reliability. 46 (2006) 9-11 - p. 1725-1730 , 2006

Link: https://doi.org/10.1016/..

15

Low frequency drain noise comparison of AlGaN/GaN HEMT's gr..:

Curutchet, A. ; Malbert, N. ; Labat, N....
Microelectronics Reliability. 43 (2003) 9-11 - p. 1713-1718 , 2003

Link: https://doi.org/10.1016/..